Specifications

TC35 / TC37 Hardware Interface Description
TC35_37_HD_02_V03.10 - Released Page 53 of 92 21.12.2001
Function Signal
Name
Pin
No.
I/O Signal Level Comment
CCIN 24 I IDLE / TALK mode:
SIM contact (active high)
R
PD
= 100k" (internal Pull Down resis-
tor to GND)
R
i
≈ 10k"
V
in,low,max
= 0.4V
V
in,high,min
= 2.15V, V
i,h,max
= 3.3V
Power Down mode:
Be aware of backward supply
All signals of the SIM
interface are pro-
tected from electro-
static discharge by
using spark gaps to
GND and clamp
diodes to 2.9V and
GND
If a card is inserted
CCIN has to be at
high level
If not used connect to
CCVCC
CCRST 25 O
R
i
≈ 47 Ω
External C = 1nF to CCGND required.
This capacitor must be located close to
the SIM card reader.
CCIO 26 I/O Output:
R
o
≈ 220 Ω (serial resistor)
V
OL
max = 0.2 V at I = 0.1 mA
V
OH
min = 2.25 V at I = -0.1 mA
V
OH
= 2.76 V
Input:
R
i
≈ 10 kΩ
V
IL
min=-0.3 V, V
IL
max = 0.5 V
V
IH
min = 1.95 V, V
IH
max=3.3 V
Usage is mandatory
Signal levels accord-
ing to GSM Rec. (2)
FFC must not exceed
200mm to meet the
timing requirements of
GSM Rec. 11.10
CCCLK 27 O Output:
R
o
≈ 220 Ω (serial resistor)
V
OL
max = 0.2 V at I = 0.1 mA
V
OH
min = 2.25 V at I = -0.1 mA
V
OH
= 2.76 V
SIM
CCVCC 28 O CCVCC
min
= 2.84V
CCVCC
max
= 2.96V
I
max
= 20mA
External C ≥ 200nF to CCGND is
required. This capacitor must be
located close to the SIM card reader.
Usage is mandatory
CCGND 29 O Ground (0V) Usage is mandatory.
See Application note
SIM Interface for de-
tails on grounding.