User's Manual

Input Voltage Logic High, VIH
VDDIO
®0.6
V
Output Voltage Logic Low, VOL 0.3 V
Output Voltage Logic High, VOH
VDDIO
®0.3
V
6.4 Electrical Characteristics – RF PLL Characteristics
Operating Conditions: VDD = 3.135 to 3.465V, TA = 0°C to +70 °C, RF Freq = 5150®5250, 5725®5850MHz,
measured relative to the RF balun single®ended I/O. Typical specifications at TA = 25°C, VDD = 3.3V
PARAMETER CONDITIONS MIN TYP MAX UNIT
RF Channel Frequency Range Lower band
Upper band
5150
5725
5250
58
50
MHz
MHz
RF Channel frequency resolution
(raster)
1 MHz
RF I/O Impedance
Balanced I/O port; TX and RX RF
ports
100 ohm
Crystal Oscillator Frequency External crystal 16 MHz
Crystal Accuracy Requirement External XTAL, -20°C to +70 °C +/-20 ppm
6.5 Electrical Characteristics – RF RX Characteristics
Operating Conditions: VDD = 3.135 to 3.465V, TA = 0°C to +70 °C, RF Freq = 5150®5250, 5725®5850MHz,
measured relative to the RF balun single®ended I/O. Typical specifications at TA = 25°C, VDD = 3.3V
PARAMETER CONDITIONS MIN TYP MAX UNIT
RF Channel Frequency Range Lower band
Upper band
5150
5725
5250
5850
MHz
MHz
RF I/O Impedance
Balanced I/O port; TX and RX RF
ports
100 ohm
RX Sensitivity SSC (single sub-carrier)
DSC (dual sub-carrier)
-89
-86
dBm
dBm
Max input signal LNA = low gain mode, min IF gain -5 dBm
Out-of-band blocker level <5150 MHz, >5850 MHz
2400-2483.5 MHz
-45
-20
dBm
dBm
Spurious RF outputs 5150-5850 MHz
<5150 MHz
>5850 MHz
-55
-63
-63
dBm
dBm
dBm
6.6 Electrical Characteristics – RF TX Characteristics
Operating Conditions: VDD = 3.135 to 3.465V, TA = 0°C to +70 °C, RF Freq = 5150®5250, 5725®5850MHz,
measured relative to the RF balun single®ended I/O. Typical specifications at TA = 25°C, VDD = 3.3V
PARAMETER CONDITIONS MIN TYP MAX UNIT
RF Channel Frequency Range Lower band
Upper band
5150
5725
5250
5850
MHz
MHz
RF I/O Impedance
Balanced I/O port; TX and RX RF
ports
100 ohm
TX Output power SSC (single sub-carrier)
DSC (dual sub-carrier)
3
(1)
0
dBm
dBm