Instruction Manual

W9864G2GH
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9. DC CHARACTERISTICS
9.1 Absolute Maximum Rating
PARAMETER SYM. RATING UNIT NOTES
Input, Column Output Voltage
V
IN, VOUT
-0.3~
VCC+0.3V V 1
Power Supply Voltage
VCC, VCCQ
-0.3~4.6V V 1
Operating Temperature
T
OPR
0 − 70
°C
1
Storage Temperature
T
STG
-55 − 150
°C
1
Soldering Temperature (10s)
T
SOLDER
260
°C
1
Power Dissipation
P
D
1 W 1
Short Circuit Output Current
I
OUT
50 mA 1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
10. RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to 70°C)
PARAMETER SYM. MIN. TYP. MAX. UNIT NOTES
Power Supply Voltage
VCC
3.0 3.3 3.6 V
Power Supply Voltage (for I/O Buffer)
VCCQ
3.0 3.3 3.6 V
Power Supply Voltage(-7)
VCC
2.7 3.3 3.6 V
Power Supply Voltage
(for I/O Buffer)(-7)
VCCQ
2.7 3.3 3.6 V
Input High Voltage VIH 2 - VCC +0.3 V 1
Input Low Voltage VIL -0.3 - +0.8 V 2
Output logic high voltage
VOH 2.4V - - V
IOH=2mA
Output logic low voltage
VOL - - 0.4 V
IOL= 2mA
Input leakage current
ILI -10 - 10 uA 3
Note: 1. VIH (max.) = VCC/VCCQ+1.2V for pulse width < 5 nS
2. VIL (min.) = VSS/VSSQ-1.2V for pulse width
< 5 nS
3. Any input 0V
<VIN<VCCQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.