User guide

W29C020C
- 10 -
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Power Supply Voltage to VSS Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V
Voltage on A9 and
OE
Pin to Ground Potential
-0.5 to 12.5 V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM. TEST CONDITIONS LIMITS UNIT
MIN. TYP. MAX.
Power Supply Current
ICC
CE
=
OE
= VIL,
WE
= VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 5 MHz
- - 50 mA
Standby VDD Current (TTL
input)
ISB1
CE
= VIH, all DQs open
Other inputs = VIL/VIH
- 2 3 mA
Standby VDD Current
(CMOS input)
ISB2
CE
= VDD -0.3V, all DQs open
- 20 100 µA
Input Leakage Current
ILI VIN = GND to VDD - - 10 µA
Output Leakage Current
ILO VIN = GND to VDD - - 10 µA
Input Low Voltage
VIL
-
- - 0.8 V
Input High Voltage
VIH
-
2.0 - - V
Output Low Voltage
VOL IOL = 2.0 mA - - 0.45 V
Output High Voltage
VOH1 IOH = -400 µA 2.4 - - V
Output High Voltage
CMOS
VOH2 IOH = -100 µA; VCC = 4.5V 4.2 - - V