W25X16, W25X32, W25X64 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI -1- Publication Release Date: June 28, 2006 Preliminary - Revision B
W25X16, W25X32, W25X64 Table of Contents1. GENERAL DESCRIPTION ......................................................................................................... 4 2. FEATURES ................................................................................................................................. 4 3. PIN CONFIGURATION SOIC 208-MIL....................................................................................... 5 4. PIN CONFIGURATION WSON 6X5-MM ..................................
W25X16, W25X32, W25X64 12. 13. 11.2.4 Write Enable (06h)........................................................................................................18 11.2.5 Read Status Register (05h) ..........................................................................................19 11.2.6 Write Status Register (01h) ..........................................................................................20 11.2.7 Read Data (03h) .............................................................
W25X16, W25X32, W25X64 1. GENERAL DESCRIPTION The W25X16 (16M-bit), W25X32 (32M-bit), and W25X64 (64M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 5mA active and 1µA for power-down.
W25X16, W25X32, W25X64 3. PIN CONFIGURATION SOIC 208-MIL Figure 1a。W25X16 Pin Assignments, 8-pin SOIC (Package Code SS) 4.
W25X16, W25X32, W25X64 5. PIN CONFIGURATION PDIP 300-MIL Figure 1c。W25X16 Pin Assignments, 8-pin PDIP (Package Code DA) 6. PIN DESCRIPTION SOIC 208-MIL, PDIP 300-MIL, AND WSON 6X5-MM PAD NO.
W25X16, W25X32, W25X64 7. PIN CONFIGURATION SOIC 300-MIL Figure 1d. W25X16, W25X32 and W25X64 Pin Assignments, 16-pin SOIC 300-mil (Package Code SF) 8. PIN DESCRIPTION SOIC 300-MIL PAD NO.
W25X16, W25X32, W25X64 8.1 Package Types At the time this datasheet was published not all package types had been finalized. Contact Winbond to confirm availability of these packages before designing to this specification. W25X16 is offered in an 8-pin plastic 208-mil width SOIC (package code SS), 6x5-mm WSON (package code ZP) and 300mil DIP (package code DA) as shown in figure 1a, 1b, and 1c, respectively.
W25X16, W25X32, W25X64 9. BLOCK DIAGRAM Figure 2.
W25X16, W25X32, W25X64 10. FUNCTIONAL DESCRIPTION 10.1 SPI OPERATIONS 10.1.1 SPI Modes The W25X16/32/64 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK), Chip Select (/CS), Serial Data Input/Output (DIO) and Serial Data Output (DO). Both SPI bus operation Modes 0 (0,0) and 3 (1,1) are supported.
W25X16, W25X32, W25X64 10.2 WRITE PROTECTION Applications that use non-volatile memory must take into consideration the possibility of noise and other adverse system conditions that may compromise data integrity. To address this concern the W25X16/32/64 provides several means to protect data from inadvertent writes. 10.2.1 Write Protect Features • Device resets when VCC is below threshold. • Time delay write disable after Power-up. • Write enable/disable instructions.
W25X16, W25X32, W25X64 11. CONTROL AND STATUS REGISTERS The Read Status Register instruction can be used to provide status on the availability of the Flash memory array, if the device is write enabled or disabled, and the state of write protection. The Write Status Register instruction can be used to configure the devices write protection features. See Figure 3. 11.1 STATUS REGISTER 11.1.
W25X16, W25X32, W25X64 11.1.6 Status Register Protect (SRP) The Status Register Protect (SRP) bit is a non-volatile read/write bit in status register (S7) that can be used in conjunction with the Write Protect (/WP) pin to disable writes to status register. When the SRP bit is set to a 0 state (factory default) the /WP pin has no control over status register. When the SRP pin is set to a 1, the Write Status Register instruction is locked out while the /WP pin is low.
W25X16, W25X32, W25X64 11.1.
W25X16, W25X32, W25X64 STATUS REGISTER(1) TB BP2 BP1 BP0 x 0 0 0 0 0 1 1 1 1 1 x 0 0 0 0 1 1 0 0 0 1 1 1 0 0 1 1 0 0 0 1 1 0 0 1 0 1 0 1 0 1 1 0 1 0 1 x W25X16 (16M-BIT) MEMORY PROTECTION BLOCK(S) ADDRESSES DENSITY (KB) NONE 31 30 and 31 28 thru 31 24 thru 31 16 thru 31 0 0 and 1 0 thru 3 0 thru 7 0 thru 15 0 thru 31 NONE 1F0000h - 1FFFFFh 1E0000h - 1FFFFFh 1C0000h - 1FFFFFh 180000h - 1FFFFFh 100000h - 1FFFFFh 000000h - 00FFFFh 000000h - 01FFFFh 000000h - 03FFFFh 000000h - 07FFFFh 000000h - 0FFFFFh
W25X16, W25X32, W25X64 11.2 INSTRUCTIONS The instruction set of the W25X16/32/64 consists of fifteen basic instructions that are fully controlled through the SPI bus (see Instruction Set table). Instructions are initiated with the falling edge of Chip Select (/CS). The first byte of data clocked into the DIO input provides the instruction code. Data on the DIO input is sampled on the rising edge of clock with most significant bit (MSB) first.
W25X16, W25X32, W25X64 11.2.
W25X16, W25X32, W25X64 11.2.3 Write Disable (04h) The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a 1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and Write Status Register instruction. The Write Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving /CS high. Figure 4.
W25X16, W25X32, W25X64 11.2.5 Read Status Register (05h) The Read Status Register instruction allows the 8-bit Status Register to be read. The instruction is entered by driving /CS low and shifting the instruction code “05h” into the DIO pin on the rising edge of CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 6.
W25X16, W25X32, W25X64 11.2.6 Write Status Register (01h) The Write Status Register instruction allows the Status Register to be written. A Write Enable instruction must previously have been executed for the device to accept the Write Status Register Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as illustrated in figure 7.
W25X16, W25X32, W25X64 11.2.7 Read Data (03h) The Read Data instruction allows one more data bytes to be sequentially read from the memory. The instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a 24-bit address (A23-A0) into the DIO pin. The code and address bits are latched on the rising edge of the CLK pin.
W25X16, W25X32, W25X64 11.2.8 Fast Read (0Bh) The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in figure 9. The dummy clocks allow the devices internal circuits additional time for setting up the initial address. During the dummy clocks the data value on the DIO pin is a “don’t care”. Figure 9.
W25X16, W25X32, W25X64 11.2.9 Fast Read Dual Output (3Bh) The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except that data is output on two pins, DO and DIO, instead of just DO. This allows data to be transferred from the W25X16/32/64 at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for applications that cache code-segments to RAM for execution.
W25X16, W25X32, W25X64 11.2.10 Page Program (02h) The Page Program instruction allows up to 256 bytes of data to be programmed at previously erased to all 1s (FFh) memory locations. A Write Enable instruction must be executed before the device will accept the Page Program Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and at least one data byte, into the DIO pin.
W25X16, W25X32, W25X64 11.2.11 Sector Erase (20h) The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2).
W25X16, W25X32, W25X64 11.2.12 Block Erase (D8h) The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2).
W25X16, W25X32, W25X64 11.2.13 Chip Erase (C7h) The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code “C7h”. The Chip Erase instruction sequence is shown in figure 14.
W25X16, W25X32, W25X64 11.2.14 Power-down (B9h) Although the standby current during normal operation is relatively low, standby current can be further reduced with the Power-down instruction. The lower power consumption makes the Power-down instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in figure 15.
W25X16, W25X32, W25X64 11.2.15 Release Power-down / Device ID (ABh) The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to release the device from the power-down state, obtain the devices electronic identification (ID) number or do both. When used only to release the device from the power-down state, the instruction is issued by driving the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16.
W25X16, W25X32, W25X64 Figure 17.
W25X16, W25X32, W25X64 11.2.16 Read Manufacturer / Device ID (90h) The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID. The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID instruction.
W25X16, W25X32, W25X64 11.2.17 JEDEC ID (9Fh) For compatibility reasons, the W25X16/32/64 provides several instructions to electronically determine the identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin low and shifting the instruction code “9Fh”.
W25X16, W25X32, W25X64 12. ELECTRICAL CHARACTERISTICS (PRELIMINARY) (4) 12.1 Absolute Maximum Ratings (1) PARAMETERS SYMBOL Supply Voltage VCC Voltage Applied to Any Pin VIO Storage Temperature TSTG Lead Temperature CONDITIONS RANGE Relative to Ground TLEAD Electrostatic Discharge Voltage VESD UNIT –0.6 to +4.0 V –0.6 to VCC +0.4 V –65 to +150 °C (2) °C See Note Human Body Model(3) –2000 to +2000 V Notes: 1.
W25X16, W25X32, W25X64 12.3 Endurance and Data Retention PARAMETER Erase/Program Cycles Data Retention CONDITIONS MIN 4KB sector, 64KB block or full chip. Full Temperature Range MAX UNIT 100,000 cycles 20 years 12.4 Power-up Timing and Write Inhibit Threshold PARAMETER SPEC SYMBOL MIN UNIT MAX VCC (min) to /CS Low tVSL(1) 10 Time Delay Before Write Instruction tPUW 1 10 ms Write Inhibit Threshold Voltage VWI 1 2 V (1) (1) Note: 1. These parameters are characterized only.
W25X16, W25X32, W25X64 12.5 DC Electrical Characteristics PARAMETER SYMBOL SPEC CONDITIONS MIN Input Capacitance CIN(1) VIN = 0V(2) Output Capacitance Cout VOUT = 0V Input Leakage TYP UNIT MAX 6 pf 8 pf ILI ±2 µA I/O Leakage ILO ±2 µA Standby Current ICC1 /CS = VCC, VIN = GND or VCC 25 50 µA Power-down Current ICC2 /CS = VCC, VIN = GND or VCC <1 5 µA Current Read Data / Dual Output Read ICC3 C = 0.1 VCC / 0.9 VCC DO = Open 5/8 10/12 mA ICC3 C = 0.1 VCC / 0.
W25X16, W25X32, W25X64 12.6 AC Measurement Conditions PARAMETER SPEC SYMBOL MIN Load Capacitance 30 CL Load Capacitance for FR1 only Input Rise and Fall Times 15 TR, TF Input Pulse Voltages Input Timing Reference Voltages Output Timing Reference Voltages UNIT MAX 5 pF ns VIN 0.2 VCC to 0.8 VCC V IN 0.3 VCC to 0.7 VCC V OUT 0.5 VCC to 0.5 VCC V Note: 1. Output Hi-Z is defined as the point where data out is no longer driven. Figure 21.
W25X16, W25X32, W25X64 12.7 AC Electrical Characteristics DESCRIPTION SYMBOL SPEC ALT MIN TYP UNIT MAX Clock frequency for all instructions, except Read Data (03h) 2.7V-3.6V VCC & Industrial Temperature FR fC D.C. 50 MHz Clock frequency for all instructions, except Read Data (03h) 3.0V-3.6V VCC & Commercial Temperature FR0 (4) fC0 D.C. 70 MHz Clock frequency, for Fast Read (0Bh, 3Bh) only 3.0V-3.6V VCC & Commercial Temperature FR1 (4) fC1 D.C. 75 MHz fR D.C.
W25X16, W25X32, W25X64 12.
W25X16, W25X32, W25X64 12.9 Serial Output Timing 12.10 Input Timing 12.
W25X16, W25X32, W25X64 13. PACKAGE SPECIFICATION 13.1 8-Pin SOIC 208-mil (Package Code SS) SYMBOL A A1 A2 b C D E E1 e L θ y MILLIMETERS MIN MAX 1.75 2.16 0.05 0.25 1.70 1.91 0.35 0.48 0.19 0.25 5.18 5.38 7.70 8.10 5.18 5.38 1.27 BSC 0.50 0.80 8o 0o --0.10 INCHES MIN MAX 0.069 0.085 0.002 0.010 0.067 0.075 0.014 0.019 0.007 0.010 0.204 0.212 0.303 0.319 0.204 0.212 0.050 BSC 0.020 0.031 0o 8o --0.004 Notes: 1. Controlling dimensions: inches, unless otherwise specified. 2.
W25X16, W25X32, W25X64 13.2 8-Pin PDIP 300-mil (Package Code DA) D 8 5 E1 4 1 B B 1 E S c A1 A A2 Base Plane Seating Plane L e1 α Symbol A A1 A2 B B1 c D E E1 e1 L α eA S Dimension in inch Min Nom Max Dimension in mm Min Nom Max 4.45 0.175 0.010 0.25 0.125 0.130 0.135 3.18 3.30 3.43 0.016 0.018 0.022 0.41 0.46 0.56 0.058 0.060 0.064 1.47 1.52 1.63 0.008 0.010 0.014 0.20 0.25 0.36 0.360 0.380 9.14 9.65 7.62 7.87 0.300 0.310 7.37 0.245 0.250 0.
W25X16, W25X32, W25X64 13.
W25X16, W25X32, W25X64 13.4 8-contact 6x5 WSON Cont’d.
W25X16, W25X32, W25X64 13.5 16-Pin SOIC 300-mil (Winbond Package Code SF) SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A 2.36 2.64 0.093 0.104 A1 0.10 0.30 0.004 0.012 b 0.33 0.51 0.013 0.020 C 0.18 0.28 0.007 0.011 10.08 10.49 0.397 0.413 10.01 10.64 0.394 0.419 7.39 7.59 0.291 0.299 D (3) E E1 e (3) (2) 1.27 BSC 0.050 BSC L 0.39 1.27 0.015 0.050 θ 0 8 0 8o y --- o o 0.076 o --- 0.003 Notes: 1.
W25X16, W25X32, W25X64 ORDERING INFORMATION (1) 14. Notes: 1. nd Only the 2 letter is used for the part marking.
W25X16, W25X32, W25X64 15. REVISION HISTORY VERSION DATE A 02/13/06 PAGE DESCRIPTION New Create Added W25X64 in the product family of W25X16/32/64. Added 300mil PDIP package. Added 6x5 mm WSON package. B 06/28/06 1-4, 6, 32-36, 41, 42 Updated Endurance and Data Retention table (11.3), ICC’s in DC Parameter table (11.5 & 11.6). Reduced tPP (max) from 5mS to 3mS. Changed tSHCH from 5nS to 0nS. Added byte programming parameters (tBP1 & tBPn.
W25X16, W25X32, W25X64 Headquarters Winbond Electronics Corporation America Winbond Electronics (Shanghai) Ltd. No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5665577 http://www.winbond.com.tw/ 2727 North First Street, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-5441798 27F, 2299 Yan An W. Rd. Shanghai, 200336 China TEL: 86-21-62365999 FAX: 86-21-62365998 Taipei Office Winbond Electronics Corporation Japan Winbond Electronics (H.K.
