Manual

W25Q80, W25Q16, W25Q32
Publication Release Date: June 20, 2007
- 51 - Advanced - Revision A5
11.8 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION SYMBOL ALT
MIN TYP MAX
UNIT
/HOLD Active Hold Time relative to CLK tCHHH 5 ns
/HOLD Not Active Setup Time relative to CLK tHHCH 5 ns
/HOLD Not Active Hold Time relative to CLK tCHHL 5 ns
/HOLD to Output Low-Z tHHQX
(2)
tLZ 7 ns
/HOLD to Output High-Z tHLQZ
(2)
tHZ 12 ns
Write Protect Setup Time Before /CS Low tWHSL
(3)
20 ns
Write Protect Hold Time After /CS High tSHWL
(3)
100 ns
/CS High to Power-down Mode tDP
(2)
3 µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1
(2)
3 µs
/CS High to Standby Mode with Electronic Signature
Read
tRES2
(2)
1.8 µs
/CS High to next Instruction after Suspend tSUS
(2)
20 µs
Write Status Register Time tW 10 15 ms
Byte Program Time (First Byte)
(5)
t
BP1
100 150 µs
Additional Byte Program Time (After First Byte)
(5)
t
BP2
6 12 µs
Page Program Time tPP 1.5 3 ms
Sector Erase Time (4KB) tSE 120 200 ms
Block Erase Time (32KB) tBE
1
0.5 1 s
Block Erase Time (64KB) tBE
2
0.75 1.5 s
Chip Erase Time W25Q80
Chip Erase Time W25Q16
Chip Erase Time W25Q32
t
CE 12
25
50
25
40
80
s
s
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/f
C.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
4. Commercial temperature only applies to Fast Read (F
R0
& F
R1
). Industrial temperature applies to all other parameters.
5. For multiple bytes after first byte within a page,
t
BPN
= t
BP1 +
t
BP2 * N
(typical) and t
BPN
= t
BP1 +
t
BP2 * N
(max), where N =
number of bytes programmed.