Owner's manual

TSM10N80
800V N-Channel Power MOSFET
2/10 Version: A12
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case
TO-220
RӨ
JC
0.43
o
C/W ITO-220 2.6
Thermal Resistance - Junction to Ambient TO-220 / ITO-220 RӨ
JA
62.5
Notes: Surface mounted on FR4 board t ≤ 10sec
Electrical Specifications (Tc = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
800 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 4.75A R
DS(ON)
-- 0.9 1.05 Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
2.0 -- 4.0 V
Zero Gate Voltage Drain Current V
DS
= 800V, V
GS
= 0V I
DSS
-- -- 10 uA
Gate Body Leakage V
GS
= ±30V, V
DS
= 0V I
GSS
-- -- ±100 nA
Forward Transconductance V
DS
= 30V, I
D
= 4.75A g
fs
-- 6.3 -- S
Diode Forward Voltage I
S
= 9.5A, V
GS
= 0V V
SD
-- -- 1.5 V
Dynamic
b
Total Gate Charge
V
DS
= 640V, I
D
= 9.5A,
V
GS
= 10V
Q
g
-- 53 --
nC
Gate-Source Charge Q
gs
-- 10 --
Gate-Drain Charge Q
gd
-- 23 --
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 2336 --
pF
Output Capacitance C
oss
-- 214 --
Reverse Transfer Capacitance C
rss
-- 29 --
Switching
c
Turn-On Delay Time
V
GS
= 10V, I
D
= 9.5A,
V
DD
= 400V, R
G
= 25Ω
t
d(on)
-- 63 --
nS
Turn-On Rise Time t
r
-- 62 --
Turn-Off Delay Time t
d(off)
-- 256 --
Turn-Off Fall Time t
f
-- 72 --
Reverse Recovery Time
V
GS
= 0V, I
S
= 9.5A,
dI
F
/dt = 100A/us
t
fr
-- 450 -- nS
Reverse Recovery Charge Q
fr
-- 5.3 -- uC
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. V
DD
= 50V, I
AS
=9.5A, L=17.2mH, R
G
=25Ω
3. I
SD
≤9.5A, di/dt ≤ 200A/uS, Vdd ≤ BV
4. Pulse test: pulse width ≤300uS, duty cycle ≤2%
5. b For design reference only, not subject to production testing.
6. c Switching time is essentially independent of operating temperature.