Owner manual

TSM10N60
600V N-Channel MOSFET
2/9 Version: C13
Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
a
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
600 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
2 3.1 4
V
Gate Body Leakage V
GS
= ±30V, V
DS
= 0V I
GSS
-- -- ±100
nA
Zero Gate Voltage Drain Current V
DS
= 600V, V
GS
= 0V I
DSS
-- -- 20
µA
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 5A
R
DS(ON)
-- 0.61 0.75
Ω
Dynamic
b
Total Gate Charge
V
DS
= 300V, I
D
= 10A,
V
GS
= 10V
Q
g
-- 45.8 --
nC
Gate-Source Charge Q
gs
-- 11.5 --
Gate-Drain Charge Q
gd
-- 16 --
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 1738 --
pF
Output Capacitance C
oss
-- 195 --
Reverse Transfer Capacitance C
rss
-- 26.3 --
Switching
b
Turn-On Delay Time
V
DD
= 300V, R
G
= 10Ω,
I
D
= 10A, V
GS
= 10V,
t
d(on)
-- 33.6 --
nS
Turn-On Rise Time t
r
-- 7.4 --
Turn-Off Delay Time t
d(off)
-- 68 --
Turn-Off Fall Time t
f
-- 15.2 --
Source-Drain Diode
a
Forward On Voltage
I
S
=10A, V
GS
=0V VSD
-- 0.8 1.5 V
Notes a: Pulse test: PW ≤ 300µS, duty cycle ≤ 2%
Notes b: For DESIGN AID ONLY, not subject to production testing.
Notes c: Switching time is essentially independent of operating temperature.