User guide

28
TS81102G0
2105C–BDC–11/03
Temperature Diode
Characteristic
The theoretical characteristic of the diode according to the temperature when I = 3 mA is
depicted below.
Figure 23. Temperature Diode Characteristic
Moisture
Characteristic
This device is sensitive to moisture (MSL3 according to the JEDEC standard).
The shelf life in a sealed bag is 12 months at < 40°C and < 90% relative humidity (RH).
After this bag is opened, devices that might be subjected to infrared reflow, vapor-phase
reflow, or equivalent processing (peak package body temperature 220°C) must be:
• mounted within 168 hours at factory conditions of ≤ 30°C/60% RH, or
•stored at ≤ 20% RH.
The devices require baking before mounting, if the humidity indicator is > 20% when read at
23°C ±5°C.
If baking is required, the devices may be baked for:
• 192 hours at 40°C + 5°C/-0°C and < 5% RH for low temperature device containers, or
• 24 hours at 125°C ± 5°C for high-temperature device containers.
DiodeT
Vdiode
(V)
I = 3 mA
dV/dT = 1.32 mV/°C
Temperature (°C)
900m
1.0
800m
700m
-70.0 -20.0 30.0 80.0
130.0