Instruction Manual

10
TH7834C
1997A–IMAGE–05/02
Electro-optical
Performance
• General measurement conditions: Tc = 25°C; Ti = 1 ms; FΦ
LA
,FΦ
LB
,FΦ
LC
,FΦ
LD
=
5 MHz, readout through 4 outputs.
• Light source: tungsten filament lamp (2,854 K) + BG 38 filter (2 mm thick) + F/3.5
aperture. The BG 38 filter limits the spectrum to 700 nm. In these conditions,
1 µJ/cm
2
corresponds to 3.5 lux.s.
• Typical operating conditions (see Table 1, 2, 3 and 4). First and last pixels of the
photosensitive line, as well as reference elements, are excluded from the
specification.
• Test without antiblooming, except for AE max.
Notes: 1. Value measured with respect to zero reference level.
2. Conversion factor is typically: 6 µV/e-.
3. Without antiblooming: Φ
A1-2
= Φ
A3-4
=0V.
4. VOS
= average output voltage; PRNU for each output, in 4 output operating mode.
5. Measured in Correlated Double Sampling (C.D.S.) mode.
6. V
DS
and DSNU vary with temperature.
7. Residual signal after line readout, at VOS
=1V.
8. Line acquisition with Phi-A at high level. AE max = maximum signal along the line (to test all the antiblooming sites).
Table 6. Electro-optical Performance
Parameter Symbol
Value
Unit RemarksMin. Typ. Max.
Saturation Output Voltage With
Antiblooming OFF
V
SAT
23 V
(1)(2)(3)
Saturation Exposure E
SAT
0.6 µJ/cm
2
Responsitivity R 3.5 5 V/µJ/cm
2
Photo Response Non-uniformity
Excluding Single Defects
PRNU ±6 ±10 %VOS
VOS =1.0V
(4)
Contrast Transfer Function At Nyquist
Frequency (77 Ip/mm)
at 500 nm
at 600 nm
at 700 nm
CTF
75
62
47
%
%
%
VOS = 1.5V
For white level
Temporal Noise In Darkness (rms) 300 µV
(5)
Dynamic Range (Relative to rms
Noise)
D
R
10000
Pixel Average Dark Signal V
DS
110 250 µV/ms
(6)
Dark Signal Non-uniformity DSNU 90 400 µV/ms Peak to peak
(6)
Register Single Stage Transfer
Efficiency
1-ε 0.99998 0.999998 VOS
=1V
Lag (Vertical Charge Transfer
Efficiency)
VCTE 0.1 0.5 %
(7)
Antiblooming Efficiency AE max <1 15 mV
(8)