User guide

7
TH7813A/TH7814A
1990A–IMAGE–05/02
Static And Dynamic Electrical Characteristics
Electro-optical
Performances
without Infrared Cut-
off Filter
The TH7813A and TH7814A special semiconductor process enables to exploit the sili-
con's high near infrared sensitivity while maintaining good imaging performances in
terms of response uniformity and resolution. Typical changes in performance with and
without IR filtering are summarized below:
Pixel Saturation
Adjustment
The TH7813A and TH7814A antiblooming structure can be used to adjust the maximum
saturation voltage, by adjusting the ΦA bias voltage. The following curve shows the rela-
tion between V
SAT
and VΦA.
Figure 7. Pixel Saturation vs. Antiblooming Bias (Typical Conditions)
Parameter Symbol
Value
Unit RemarksMin Typ Max
Output Amplifier Supply Current I
DD
10 mA per amplifier
Output Impedance Z
S
200 225 259 Ω
DC Output Level V
REF
10 V
Output Conversion Factor CVF 5 µV/e-
Offset in Darkness DC off 30 mV
Reset Feedthrough Vft 400 mV
Parameter With IR Cut-off Filter Without IR Cut-off Filter
Average Video Signal Due to a Given Illumination V
OS
6xV
OS
PRNU (Single Defects Excluded) ±5% 5%
CTF at Nyquist Frequency 65% 49%
234567
0
1
2
3
(V)
Antiblooming Bias
Typical conditions
Saturation Voltage
(V)