Owner manual

Table Of Contents
90
T48C862-R8
4590B–4BMCU–02/03
Figure 89. FSK Modulation
Data EEPROM The internal data EEPROM offers 2 pages of 512 bits each. Both pages are organized
as 32 ´ 16-bit words. The programming voltage as well as the write cycle timing is gen-
erated on chip. To be compatible with the ROM parts, two restrictions have to be taken
into account:
To use the same EEPROM page as with the ROM parts the application software has
to write the MCL-command “09h” to the EEPROM. This command has no effect for
the microcontroller if it is left inside the HEX-file for the ROM version.
Data handling for read and write is performed using the serial interface MCL.
The page select is performed by either writing “01h” (page 1) or “09h” (page 0) to the
EEPROM.
Figure 90. Data EEPROM
01234012340123
Counter 3
CM31
CM32
SO
40120120120120120120120123
T3R
40
T3O
1
01 0
16-bit read/write buffer
Address
control
8-bit data register
EEPROM
2 x 32 x 16
HV-generatorTiming control
Mode
control
I/O
control
SCL
V
DD
V
SS
SDA
Page 1
Page 0
--> Write "01h"
--> Write "09h"