User Manual

ManualsBrandsRainbow Electronics ManualsOpticsSIR-56ST3F

SIR-56ST3F

Sensors

1/3

Infrared light emitting diode, top view type

SIR-56ST3F

The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous

efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household

remote control devices.

!Applications

Optical control equipment

Light source for remote control devices

!Features

1) High efficiency, high output P

O=8.0mW (IF=50mA).

2) Emission spectrum well suited to silicon detectors.

3) Good current-optical output linearity.

4) Long life, high reliability.

!External dimensions (Units : mm)

2− 0.5

Min.24

8.7±0.3

2.5±1

Max.1

φ5.0±0.2

φ6±0.3

(2.5)

2−0.6

Notes:

1. Unspecified tolerance

shall be ±0.2.

2. Dimension in parenthesis are

show for reference.

Anode

Cathode

!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol

IFP

∗

Topr

Tstg

Limits

−25~+85

−40~+85

100

160

1.0

Unit

°C

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature

∗ Pulse width=0.1msec, duty ratio 1%

Summary of content (3 pages)

PAGE 1
SIR-56ST3F Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remote control devices. !External dimensions (Units : mm) !Applications Optical control equipment Light source for remote control devices 1 Max.1 2−0.6 Notes: 1. Unspecified tolerance shall be ±0.2. 2.
PAGE 2
SIR-56ST3F Sensors !Electrical and optical characteristics (Ta = 25°C) Symbol Parameter Min. Typ. Max. Unit Conditions Optical output PO − 8.0 − mW IF=50mA Emitting strength IE 5.6 − − mW/sr IF=50mA Forward voltage VF − 1.3 1.6 V IF=100mA Reverse current IR − − 10 µA VR=3V Peak light emitting wavelength λP − 950 − nm IF=50mA ∆λ − 40 − nm IF=50mA Half-viewing angle θ1 / 2 − ±15 − deg IF=50mA Pesponse time tr·tf − 1.0 − µs IF=50mA fC − 1.
PAGE 3
SIR-56ST3F Sensors 10° 0° 100 30° 80 40° 50° 60 60° 40 70° 20 80° 90° 100 80 60 40 20 RELATIVE EMITTING STRENGTH (%) 0 RELATIVE EMITTING STRENGTH (%) 20° 10° 20° 30° 40° 50° 60° 70° 80° 90° AMGULAR DISPLACEMENT : θ (deg) Fig.