Manual

RPT-37PB3F
Sensors
1/2
Phototransistor, top view type
RPT-37PB3F
The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no
effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
It is possible to distinguish the polarity by the shape of ramp type.
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!Applications
Optical control equipment
Receiver for sensors
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!Features
1) High sensitivity.
2) Almost no effect from stray light.
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!External dimensions (Units : mm)
φ3.1±0.2
φ3.8±0.3
1.3Max.1
5.2±0.3Min.24
2− 0.5
(2.5)
4−0.6
2.5±1
1
1
2
2
Internal connection diagram
Notes :
1. Unspecfied tolerance shall be ±0.2.
2. Measurement in the bracket are that of
lead pin at base the mold.
3. Dimension in parenthesis are show for
reference.
Emitter Collector
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!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
I
C
V CEO
P C
V ECO
Topr
Tstg
Limits
−25~+85
−30~+100
32
5
30
150
Unit
V
V
mA
mW
°C
°C
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
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!Electrical and optical characteristics (Ta = 25°C)
Parameter Symbol
I
C
I CEO
λ P
V CE(sat)
θ 1 / 2
t r ·t f
Min.
2.0
−
−
−
−
−
Typ.
−
−
800
−
±36
10
Max.
−
0.5
−
0.4
−
−
Unit
mA V
CE =5V, E=500L X
V CE =10V(Black box)
−
I
C =1mA, E=500L X
−
V
CC =5V, I C =1mA, R L =100Ω
µA
nm
V
deg
µs
Conditions
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time