Instruction Manual

RPT-34PB3F
Sensors
1/2
Phototransistor, top view type
RPT-34PB3F
The RPT-34PB3F is a silicon planar phototransistor.
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
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!Applications
Optical control equipment
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Features
High sensitivity.
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External dimensions
(Units : mm)
2−0.6
2−0.5
1.11.0
Max.
2.5±1.0
(2.5)
5.2±0.3
24.0Min.
φ 3.1±0.2
φ3.8±0.3
φ3.5
Emitter Collector
1
1
2
2
Internal connection diagram
Notes :
1. Unspecfied tolerance
shall be ±0.2.
2. Dimension in parenthesis
are show for reference.
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!!
!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
I
C
V CEO
P C
V ECO
Topr
Tstg
Limits
−25~+85
−30~+100
32
5
30
150
Unit
V
V
mA
mW
°C
°C
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
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!Electrical and optical characteristics (Ta = 25°C)
Parameter Symbol
I
C
ICEO
λ P
V CE(sat)
θ 1 / 2
tr·tf
Min.
2.0
−
−
−
−
−
Typ.
−
−
800
−
±36
10
Max.
−
0.5
−
0.4
−
−
Unit
mA V
CE=5V, E=500LX
VCE=10V(Black box)
−
I
C=1mA, E=500LX
−
V
CC=5V, IC=1mA, RL=100Ω
µA
nm
V
deg
µs
Conditions
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time