Manual
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________ 5
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain G
C
f
RF
= 2400MHz to 2900MHz,
T
C
= +25°C (Notes 8, 9, 10)
8.1 8.7 9.3 dB
f
RF
= 2305MHz to 2360MHz 0.2
f
RF
= 2500MHz to 2570MHz 0.15
f
RF
= 2570MHz to 2620MHz 0.2
f
RF
= 2500MHz to 2690MHz 0.25
Conversion Gain Flatness
f
RF
= 2700MHz to 2900MHz 0.25
dB
Gain Variation Over Temperature TC
CG
f
RF
= 2300MHz to 2900MHz, T
C
= -40°C to
+85°C
-0.01 dB/°C
Input Compression Point IP
1dB
(Notes 6, 8, 11) 9.6 11.3 dBm
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone
(Notes 8, 9)
21.6 23 dBm
Third-Order Input Intercept Point IIP3
f
RF
= 2600MHz, f
RF1
- f
RF2
= 1MHz,
P
RF
= -5dBm per tone, T
C
= +25°C
(Notes 8, 9)
22 23.8 dBm
Thi r d - O r d er Inp ut Inter cep t P oi nt
V ar i ati on Over Tem p er atur e
f
RF1
- f
RF2
= 1MHz, T
C
= -40°C to +85°C ±0.3 dBm
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF-to-IF Isolation 25 dB
LO Leakage at RF Port (Notes 8, 9) -28 dBm
2LO Leakage at RF Port -33 dBm
LO Leakage at IF Port -18.5 dBm
Channel Isolation
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω
38.5 43 dB
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(
Typical Application Circuit
optimized for the standard RF band (see Table 1),V
CC
= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
LO
= 2650MHz to 3250MHz, f
IF
= 350MHz,
f
RF
< f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2950MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the standard RF band (see Table 1), V
CC
= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
LO
= 1950MHz to 2550MHz, f
IF
= 350MHz,
f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= +5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2250MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)










