User Manual

MAX11008
Dual RF LDMOS Bias Controller with
Nonvolatile Memory
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PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LDMOS GATE DRIVER (Gain = 2)
I
GATE_
= ±0.1mA 0.1
AV
DD
-
0.1
Output Gate-Drive Voltage Range V
GATE_
I
GATE_
= ±2mA 0.75
AV
DD
-
0.75
V
Output Impedance R
GATE_
Measured at DC 0.1 Ω
GATE_ Settling Time t
GATE_
R
S
= 500Ω, C
GATE_
= 15µF, V
GATE_
=
0.5V to 4.5V (Note 1)
45 ms
R
SERIES
= 0Ω 0 0.5
Output Capacitive Load C
GATE_
R
SERIES
= 500Ω 0 15,000
nF
GATE_ Noise 1kHz to 1MHz 1000 µV
P-P
Maximum Power-On Transient ±100 mV
Output Short-Circuit Current Limit I
SC
1s, sinking or sourcing ±25 mA
Total Unadjusted Error TUE
Worst case at CODE = 4063, use
external reference (Note 2)
±7 ±25 mV
Total Unadjusted Error without
Offset
TUE
NO_OFFSET
CalCODE = 2457, MaxCODE = 2867,
use external reference, T
A
= +25°C
(Note 2)
±8 mV
Drift Gain = 2, MaxCODE = 2867 (Note 2) ±15 µV/°C
Clamp to Zero Delay C
GATE_
= 0.5nF (Note 3) 1 µs
Output-Safe Switch On-
Resistance
R
OPSW
V
GATE_
clamped to AGND (Note 4) 300 Ω
MONITOR ADC (DC characteristics)
Resolution N
ADC
12 Bits
Differential Nonlinearity DNL
ADC
(Note 5) -2 +2 LSB
Integral Nonlinearity INL
ADC
±2 LSB
Offset Error ±2 ±4 LSB
Gain Error (Note 6) ±2 ±4 LSB
Gain Temperature Coefficient ±0.4 ppm/°C
Offset Temperature Coefficient ±0.4 ppm/°C
MONITOR ADC DYNAMIC CHARACTERISTICS (1kHz sine-wave input, 2.5V
P-P
, up to 94.4ksps)
Signal-to-Noise Plus Distortion SINAD 70 dB
Total Harmonic Distortion THD Up to 5th harmonic -82 dBc
Spurious-Free Dynamic Range SFDR 86 dBc
Intermodulation Distortion IMD f
IN1
= 0.99kHz, f
IN2
= 1.02kHz 76 dBc
Full-Power Bandwidth -3dB 1 MHz
Full-Linear Bandwidth SINAD > 68dB 100 kHz
ELECTRICAL CHARACTERISTICS (continued)
(V
CS_+
= +32V, AV
DD
= DV
DD
= +5V ±5%, external V
REFADC
= +2.5V, external V
REFDAC
= +2.5V, C
REF
= 0.1µF, C
GATE_
= 0.1nF,
V
SENSE
= V
CS_+
- V
CS_-
, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at T
A
= +25°C.)