Manual

DS1841
Temperature-Controlled, NV, I
2
C,
Logarithmic Resistor
4 _______________________________________________________________________________________
Note 1: All voltages are referenced to ground. Currents entering the IC are specified positive and currents exiting the IC are
negative.
Note 2:I
CC
is specified with the following conditions: SCL and SDA = V
CC
, RW and RH floating with Update Mode bit = 1.
Note 3: This is the minimum V
CC
voltage that causes NV memory to be recalled.
Note 4: This is the time from V
CC
> V
POR
until initial memory recall is complete.
Note 5: Guaranteed by design.
Note 6: I
2
C interface timing shown is for Fast-Mode (400kHz) operation. This device is also backward-compatible with I
2
C-
Standard Mode timing.
Note 7: C
B
—total capacitance of one bus line in picofarads.
Note 8: EEPROM write time begins after a STOP condition occurs.
Note 9: Guaranteed by characterization.
I
2
C AC ELECTRICAL CHARACTERISTICS (See Figure 3) (continued)
(V
CC
= +2.7V to +5.5V, T
A
= -40°C to +100°C, timing referenced to V
IL(MAX)
and V
IH(MIN)
.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
EEPROM Write Time t
W
(Note 8) 10 20 ms
A0, A1 Setup Time t
SU:A
Before START 0.6 μs
A0, A1 Hold Time t
HD:A
After STOP 0.6 μs
Input Capacitance on
A0, A1, SDA, or SCL
C
I
5 10 pF
Startup Time t
ST
2 ms
NONVOLATILE MEMORY CHARACTERISTICS
(V
CC
= +2.7V to +5.5V)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
EEPROM Write Cycles T
A
= +85°C 50,000 Writes
EEPROM Write Cycles T
A
= +25°C (Note 9) 200,000 Writes