Instruction Manual

97
ATAR862-4
4552B–4BMCU–02/03
Crystal
Characteristics
Figure 95. Crystal Equivalent Circuit
32-kHz Crystal Oscillator (Operating Range V
DD
= 2.0 V to 4.0 V)
Frequency f
X
32.768 kHz
Start-up time t
SQ
0.5 s
Stability Df/f -10 10 ppm
Integrated input/output capacitances
(mask programmable)
C
IN
/C
OUT
programmable in steps of
2pF
C
IN
C
OUT
0
0
20
20
pF
pF
External 32-kHz Crystal Parameters
Crystal frequency f
X
32.768 kHz
Serial resistance RS 30 50 kW
Static capacitance C0 1.5 pF
Dynamic capacitance C1 3 fF
External 4-MHz Crystal Parameters
Crystal frequency f
X
4.0 MHz
Serial resistance RS 40 150 W
Static capacitance C0 1.4 3 pF
Dynamic capacitance C1 3 fF
EEPROM
Operating current during erase/write
cycle
I
WR
600 1300 µA
Endurance Erase-/write cycles
T
amb
= 105°C
E
D
E
D
500,000
50,000
1,000,000
100,000
Cycles
Cycles
Data erase/write cycle time For 16-bit access t
DEW
912ms
Data retention time
T
amb
= 105°C
t
DR
t
DR
100
1
Ye a rs
Ye a rs
Power-up to read operation t
PUR
0.2 ms
Power-up to write operation t
PUW
0.2 ms
Serial Interface
SCL clock frequency f
SC_MCL
100 500 kHz
AC Characteristics (Continued)
Supply Voltage V
DD
= 2.0 V to 4.0 V, V
SS
= 0 V, T
amb
= 25°C unless otherwise specified.
Parameters Test Conditions Symbol Min. Typ. Max. Unit
L
C1
RS
C0
OSCIN
OSCOUT
Equivalent
circuit
SCLIN SCLOUT