User Manual

93
ATAR862-3
4556B–4BMCU–02/03
Note: Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at any condition above those indicated in the operational section of this
specification is not implied. Exposure to absolute maximum rating condition for an extended period may affect device reliability.
All inputs and outputs are protected against high electrostatic voltages or electric fields. However, precautions to minimize the
build-up of electrostatic charges during handling are recommended. Reliability of operation is enhanced if unused inputs are
connected to an appropriate logic voltage level (e.g., V
DD
).
Absolute Maximum Ratings
Voltages are given relative to V
SS
Parameters Symbol Value Unit
Supply voltage V
DD
-0.3 to +4.0 V
Input voltage (on any pin) V
IN
V
SS
-0.3 £ V
IN
£ V
DD
+0.3 V
Output short circuit duration t
short
Indefinite s
Operating temperature range T
amb
-40 to +125 °C
Storage temperature range T
stg
-40 to +130 °C
Soldering temperature (t £ 10 s) T
sld
260 °C
Thermal Resistance
Parameter Symbol Value Unit
Thermal resistance (SSO20) R
thJA
140 K/W
DC Operating Characteristics
V
SS
= 0 V, T
amb
= -40°C to +125°C unless otherwise specified.
Parameters Test Conditions Symbol Min. Typ. Max. Unit
Power Supply
Operating voltage at V
DD
V
DD
V
POR
4.0 V
Active current
CPU active
f
SYSCL
= 1 MHz
V
DD
= 1.8 V
V
DD
= 3.0 V
I
DD
200
300 450
µA
µA
Power down current
(CPU sleep,
RC oscillator active,
4-MHz quartz oscillator active)
f
SYSCL
= 1 MHz
V
DD
= 1.8 V
V
DD
= 3.0 V
I
PD
40
70 180
µA
µA
Sleep current
(CPU sleep,
32-kHz quartz oscillator active
4-MHz quartz oscillator inactive)
V
DD
= 1.8 V
V
DD
= 3.0 V
I
Sleep
0.4
0.6 2.3
µA
µA
Sleep current
(CPU sleep,
32-kHz quartz oscillator inactive
4-MHz quartz oscillator inactive)
V
DD
= 1.8 V
V
DD
= 3.0 V
I
Sleep
0.1
0.3 1.5
µA
µA
Pin capacitance Any pin to V
SS
C
L
710pF