User Manual

12
ATAR862-3
4556B–4BMCU–02/03
Output power variation for the full
temperature range
T
amb
= -40°C to +85°C
V
S
= 3.0 V
V
S
= 2.0 V
DP
Ref
DP
Ref
-1.5
-4.0
dB
dB
Output power variation for the full
temperature range
T
amb
= -40°C to +125°C
V
S
= 3.0 V
V
S
= 2.0 V
P
Out
= P
Ref
+ DP
Ref
DP
Ref
DP
Ref
-2.0
-4.5
dB
dB
Achievable output-power range Selectable by load impedance P
Out_typ
08.0dBm
Spurious emission f
CLK
= f
0
/128
Load capacitance at Pin CLK = 10 pF
f
O
± 1´ f
CLK
f
O
± 4 ´ f
CLK
other spurious are lower
-55
-52
dBc
dBc
Oscillator frequency XTO
(= phase comparator frequency)
f
XTO
= f
0
/32
f
XTAL
= resonant frequency of the
XTAL, C
M
£ 10 fF, load capacitance
selected accordingly
T
amb
= -40°C to +85°C
T
amb
= -40°C to +125°C
f
XTO
-30
-40
f
XTAL
+30
+40
ppm
ppm
PLL loop bandwidth 250 kHz
Phase noise of phase
comparator
Referred to f
PC
= f
XT0,
25 kHz distance to carrier
-116 -110 dBc/Hz
In loop phase noise PLL 25 kHz distance to carrier -86 -80 dBc/Hz
Phase noise VCO at 1 MHz
at 36 MHz
-94
-125
-90
-121
dBc/Hz
dBc/Hz
Frequency range of VCO f
VCO
310 330 MHz
Clock output frequency (CMOS
microcontroller compatible)
f
0
/128 MHz
Voltage swing at Pin CLK C
Load
£ 10 pF V
0h
V
0l
V
S
´ 0.8
V
S
´ 0.2
V
V
Series resonance R of the crystal Rs 110 W
Capacitive load at Pin XT0 7pF
FSK modulation frequency rate Duty cycle of the modulation signal =
50%
032kHz
ASK modulation frequency rate Duty cycle of the modulation signal =
50%
032kHz
ENABLE input Low level input voltage
High level input voltage
Input current high
V
Il
V
Ih
I
In
1.7
0.25
20
V
V
µA
PA_ENABLE input Low level input voltage
High level input voltage
Input current high
V
Il
V
Ih
I
In
1.7
0.25
5
V
V
µA
Electrical Characteristics (Continued)
V
S
= 2.0 V to 4.0 V, T
amb
= -40°C to 125°C unless otherwise specified.
Typical values are given at V
S
= 3.0 V and T
amb
= 25°C. All parameters are referred to GND (Pin 7).
Parameters Test Conditions Symbol Min. Typ. Max. Unit