Manual

19
9122B–AUTO–10/08
ATA6833/ATA6834 [Preliminary]
4.22
Dominant time for wake-up
via LIN-bus
V
LIN
= 0V T
BUS
30 90 150 µs A
5 Control Inputs EN1, IL1-3, IH1-3, WD, TX, WDD
5.1 Input low-level threshold V
IL
0.3 ×
V
VCC
VA
5.2 Input high-level threshold V
IH
0.7 ×
V
VCC
VA
5.3 Hysteresis HYS 0.3 C
5.4 Pull-down resistor EN1, IL1-3, IH1-3, WD R
PD
25 50 100 kΩ A
5.5 Pull-up resistor TXD, WDD R
PU
25 50 100 kΩ A
5.7 Debounce time EN1 t
gotosleep
91011 µsA
6Charge Pump
6.1 Charge pump voltage
V
VBAT
> 7V
I
LoadCPOUT
= 0A
I
LoadVG
= 0A
C
CP1,2
= 47 nF
C
CPOUT
= 220 nF
CPOUT V
CPOUT
V
VBAT
+ 11V
V
VBAT
+ 18
VA
6.2 Charge pump voltage
V
VBAT
> 7V
I
LoadCPOUT
= 7.5 mA,
I
LoadVG
= 0A
C
CP1,2
= 47 nF
C
CPOUT
= 220 nF
CPOUT V
CPOUT
V
VBAT
+10V
VA
6.3
Period charge pump
oscillator
T
CP
2.5 µs B
6.4
Charge pump output
voltage for active drivers
CPOUT VCP
CPGOOD
TBD 7.5 TBD V A
7 VG Regulator
7.1
VG Regulator Output
Voltage
V
BAT
= 13.5V
V
CPOUT
= 20V
I
LoadVG
= 7.5 mA
VG V
VG
11 12.5 14 V A
7.2
VG Regulator Line
Regulation
V
BAT
= 13.5V
V
CPOUT1
= 20V, V
CPOUT2
= 35V
I
LoadVG
= 7.5 mA
VG ΔV
VG_Line
100 mV A
7.3
VG Regulator Load
Regulation
V
BAT
= 13.5V
V
CPOUT
= 25V
I
LoadVG1
=1mA, I
LoadVG2
=60mA
VG ΔV
VG_Load
100 mV A
8 H-bridge Driver
8.1
Low-side driver HIGH
output voltage
V
LxH
V
VG
VD
8.2
ON-resistance of sink stage
of pins Lx
ILX = 100 mA R
DSON_LxL
20 Ω A
8.3
ON-resistance of source
stage of pins Lx
ILX = 100 mA R
DSON_LxH
20 Ω A
8. Electrical Characteristics (Continued)
All parameters given are valid for 5.5V ≤ V
VBAT
≤ 18V and for –40°C ≤ T
J
≤ 150°C (200°C) unless stated otherwise. All values refer to PIN
GND. [xxx] Values for the ATA6834.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter