Manual
9
4912C–AUTO–10/06
ATA6827 [Preliminary]
3.6
Thermal shutdown
hysteresis
∆T
j switch off
15 °C B
3.7
Ratio thermal shutdown
off/thermal prewarning
set
T
j switch off/
T
jPW set
1.05 1.15 B
3.8
Ratio thermal shutdown
on/thermal prewarning
reset
T
j switch on/
T
jPW reset
1.05 1.15 B
4 Output Specification (OUT1-OUT3)
4.1
On resistance
I
Out 1-3
= –0.9A
2, 12,
15
R
DSOn1-3
1.8 Ω A
4.2 I
Out 1-3
= +0.9A
2, 12,
15
R
DSOn1-3
1.8 Ω A
4.3
High-side output
leakage current
V
Out 1-3
= 0V
,
output stages off
2, 12,
15
I
Out1-3
–60 µA A
4.4
Low-side output
leakage current
V
Out 1-3
= V
VS,
output stages off
2, 12,
15
I
Out1-3
300 µA A
4.5
High-side switch
reverse diode forward
voltage
I
Out 1-3
= 1.5A
2, 12,
15
V
Out1-3
– V
VS
2 V A
4.6
Low-side switch reverse
diode forward voltage
I
Out 1-3
= –1.5A
2, 12,
15
V
Out 1-3
–2 V A
4.7
High-side overcurrent
limitation and shutdown
threshold
7.5V < V
S
< 20V
2, 12,
15
I
Out1-3
1.0 1.3 1.7 AA A
4.8
Low-side overcurrent
limitation and shutdown
threshold
7.5V < V
S
< 20V
2, 12,
15
I
Out1-3
–1.7 –1.3 –1.0 A A
4.18
High-side overcurrent
limitation and shutdown
threshold
20V < V
S
< 40V
2, 12,
15
I
Out1-3
1.0 1.3 2.0 AA A
4.19
Low-side overcurrent
limitation and shutdown
threshold
20V < V
S
< 40V
2, 12,
15
I
Out1-3
–2.0 –1.3 –1.0 A A
4.9
Overcurrent shutdown
delay time
2, 12,
15
t
dSd
10 40 µs A
4.10
High-side open-load
detection threshold
2, 12,
15
I
Out1-3
–55 –30 –5 mA A
4.11
Low-side open-load
detection threshold
2, 12,
15
I
Out1-3
5 30 55 mA A
4.12
Open-load detection
delay time
t
dSd
200 600 µs A
8. Electrical Characteristics (Continued)
7.5V < V
VS
< 40V; 4.75V < V
VCC
< 5.25 V; INH = High; –40°C ≤ T
j
≤ 200°C; T
a
≤ 150°C; unless otherwise specified, all values refer to
GND pins.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note: 1. Delay time between rising edge of the input signal at pin CS after data transmission and switch on output stages to 90% of
final level. Device not in standby for t > 1 ms