Manual

11
9146E–AUTO–03/11
Atmel ATA6663/ATA6664
6. Electrical Characteristics
5V < V
S
< 27V, T
j
= –40°C to +150°C
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1V
S
Pin
1.1 DC voltage range nominal 7 V
S
5 13.5 27 V A
1.2 Supply current in sleep mode
Sleep mode
V
LIN
> V
S
– 0.5V
V
S
< 14V
7I
VSsleep
10 20 µA A
Sleep mode,
bus shorted to GND
V
LIN
= 0V
V
S
< 14V
7I
VSsleep_sc
23 45 µA A
1.3
Supply current in normal mode
Bus recessive
V
S
< 14V
7I
VSrec
0.9 1.3 mA A
1.4
Bus dominant
V
S
< 14V
Total bus load > 500Ω
7I
VSdom
1.2 2 mA A
1.5 Supply current in fail-safe mode
Bus recessive
V
S
< 14V
7I
VSfail
0.5 1.1 mA A
1.6 V
S
undervoltage threshold on 7 V
Sth
44.95VA
1.7 V
S
undervoltage threshold off 7 V
Sth
4.05 5 V A
1.8
V
S
undervoltage threshold
hysteresis
7V
Sth_hys
50 500 mV A
2 RXD Output Pin (Open Drain)
2.1 Low-level output sink current
Normal mode
V
LIN
= 0V, V
RXD
= 0.4V
1I
RXDL
1.3 2.5 8 mA A
2.2 RXD saturation voltage 5-kΩ pull-up resistor to 5V 1 Vsat
RXD
0.4 V A
2.3 High-level leakage current
Normal mode
V
LIN
= V
BAT
, V
RXD
= 5V
1I
RXDH
–3 +3 µA A
2.4 ESD Zener diode I
RXD
= 100µA 1 VZ
RXD
5.8 8.6 V A
3 TXD Input Pin
3.1 Low-level voltage input 4 V
TXDL
–0.3 +0.8 V A
3.2 High-level voltage input 4 V
TXDH
27VA
3.3 Pull-down resistor V
TXD
= 5V 4 R
TXD
125 250 600 kΩ A
3.4 Low-level leakage current V
TXD
= 0V 4 I
TXD_leak
–3 +3 µA A
3.5 Low-level output sink current
Fail-safe mode, local wake-up
V
TXD
= 0.4V
V
LIN
= V
BAT
4I
TXD
1.3 2.5 8 mA A
4EN Input Pin
4.1 Low-level voltage input 2 V
ENL
–0.3 +0.8 V A
4.2 High-level voltage input 2 V
ENH
27VA
4.3 Pull-down resistor V
EN
= 5V 2 R
EN
125 250 600 kΩ A
4.4 Low-level input current V
EN
= 0V 2 I
EN
–3 +3 µA A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter