Manual
Table Of Contents
- Features
- Pin Configurations
- Description
- Architectural Overview
- General Purpose Register File
- ALU – Arithmetic Logic Unit
- In-System Programmable Flash Program Memory
- SRAM Data Memory
- Program and Data Addressing Modes
- Register Direct, Single Register Rd
- Register Direct, Two Registers Rd and Rr
- I/O Direct
- Data Direct
- Data Indirect with Displacement
- Data Indirect
- Data Indirect with Pre- decrement
- Data Indirect with Post- increment
- Constant Addressing Using the LPM Instruction
- Indirect Program Addressing, IJMP and ICALL
- Relative Program Addressing, RJMP and RCALL
- EEPROM Data Memory
- Memory Access Times and Instruction Execution Timing
- I/O Memory
- Reset and Interrupt Handling
- Reset Sources
- Power-on Reset
- External Reset
- Brown-out Detection
- Watchdog Reset
- MCU Status Register – MCUSR
- Interrupt Handling
- General Interrupt Mask Register – GIMSK
- General Interrupt Flag Register – GIFR
- Timer/Counter Interrupt Mask Register – TIMSK
- Timer/Counter Interrupt Flag Register – TIFR
- External Interrupts
- Interrupt Response Time
- MCU Control Register – MCUCR
- Sleep Modes
- Timer/Counters
- 16-bit Timer/Counter1
- Watchdog Timer
- EEPROM Read/Write Access
- Serial Peripheral Interface – SPI
- UART
- Analog Comparator
- Analog-to-Digital Converter
- I/O Ports
- Memory Programming
- Electrical Characteristics
- External Clock Drive Waveforms
- Typical Characteristics
- Register Summary
- Instruction Set Summary
- Ordering Information
- Packaging Information
- Errata for AT90S/LS4433 Rev. Rev. C/D/E/F
- Data Sheet ChangeLog for AT90S/LS4433
- Table of Contents
89
AT90S/LS4433
1042G–AVR–09/02
G:WriteDataHighByte
1. Set BS to “1”. This selects high data.
2. Give WR
a negative pulse. This starts programming of the data byte. RDY/BSY
goes low.
3. Wait until RDY/BSY
goes high to program the next byte.
(See Figure 64 for signal waveforms.)
The loaded command and address are retained in the device during programming. For
efficient programming, the following should be considered:
• The command needs to be loaded only once when writing or reading multiple
memory locations.
• Address High Byte needs to be loaded only before programming a new 256-word
page in the Flash.
• Skip writing the data value $FF, that is, the contents of the entire Flash and
EEPROM after a Chip Erase.
These considerations also apply to EEPROM programming and Flash, EEPROM and
signature bytes reading.
Figure 63. Programming the Flash Waveforms
$10 ADDR. HIGH ADDR. LOW DATA LOWDATA
XA1
XA0
BS
XTAL1
WR
RDY/BSY
RESET
OE
12V