Instruction Manual

3597J–DFLASH–4/08

AT45DB321D

Group D commands consist of:

1. Erase Sector Protection Register

2. Program Sector Protection Register

3. Sector Lockdown

4. Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A,

B, C, or D should not be started. However, during the internally self-timed portion of Group B

commands, any command in Group C can be executed. The Group B commands using buffer 1

should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-

timed portion of a Group D command, only the Status Register Read command should be

executed.

15. Command Tables

Table 15-1. Read Commands

Command Opcode

Main Memory Page Read D2H

Continuous Array Read (Legacy Command) E8H

Continuous Array Read (Low Frequency) 03H

Continuous Array Read (High Frequency) 0BH

Buffer 1 Read (Low Frequency) D1H

Buffer 2 Read (Low Frequency) D3H

Buffer 1 Read D4H

Buffer 2 Read D6H

Table 15-2. Program and Erase Commands

Command Opcode

Buffer 1 Write 84H

Buffer 2 Write 87H

Buffer 1 to Main Memory Page Program with Built-in Erase 83H

Buffer 2 to Main Memory Page Program with Built-in Erase 86H

Buffer 1 to Main Memory Page Program without Built-in Erase 88H

Buffer 2 to Main Memory Page Program without Built-in Erase 89H

Page Erase 81H

Block Erase 50H

Sector Erase 7CH

Chip Erase C7H, 94H, 80H, 9AH

Main Memory Page Program Through Buffer 1 82H

Main Memory Page Program Through Buffer 2 85H