User Manual

49
AT45DB041E [ADVANCE DATASHEET]
8783B–DFLASH–11/2012
18.5 Program and Erase Characteristics
Notes: 1. Values are based on device characterization, not 100% tested in production.
2. Not 100% tested (value guaranteed by design and characterization).
19. Input Test Waveforms and Measurement Levels
20. Output Test Load
Symbol Parameter Min Typ Max Units
t
EP
Page Erase and Programming Time (256/264 bytes) 15 40 ms
t
P
Page Programming Time 3 6 ms
t
BP
Byte Programming Time 8 μs
t
PE
Page Erase Time 12 35 ms
t
BE
Block Erase Time 45 100 ms
t
SE
Sector Erase Time 1.4 3.5 s
t
CE
Chip Erase Time 22 40 s
t
SUSP
Suspend Time
Program 10 20
μs
Erase 20 40
t
RES
Resume Time
Program 10 20
μs
Erase 20 40
t
OTPP
OTP Security Register Program Time 200 500 μs
AC
Driving
Levels
AC
Measurement
Level
0.1V
CC
V
CC
/2
0.9V
CC
t
R
, t
F
< 2ns (10% to 90%)
Device
Under
Test
30pF