User Manual

9570H–AT42–02/10

AT42QT1110-MZ/AT42QT1110-AZ

8. Specifications

8.1 Absolute Maximum Specifications

8.2 Recommended Operating Conditions

8.3 DC Specifications

8.4 Timing Specifications

Vdd -0.5 to +6V

Max continuous pin current, any control or drive pin ±10 mA

Voltage forced onto any pin -1.0V to (Vdd + 0.5) Volts

EEPROM setups maximum writes 100,000 write cycles

CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or other conditions beyond those indicated

in the operational sections of this specification is not implied. Exposure to absolute maximum specification conditions for

extended periods may affect device reliability

Operating temperature -40°C to +125°C

Storage temperature -65°C to +150°C

Vdd 3V to 5.5V

Supply ripple + noise ±20 mV

Cx transverse load capacitance per key 2 to 20 pF

Vdd = 5.0V, Cs = 4.7 nF, Rs = 1 M, Ta = recommended range, unless otherwise noted

Parameter Description Min Typ Max Units Notes

Iddr Average supply current, running – –

12 at 5V

8 at 3V

For typical values

seeSection 8.8

Vil Low input logic level -0.5V – 0.3 Vdd V

Vih High input logic level 0.6 Vdd Vdd Vdd + 0.5V V

Vol Low output voltage 0 – 0.7 V 10 mA sink current

Voh High output voltage 0.8 Vdd – Vdd V 10 mA source current

Iil Input leakage current – <0.05 1 µA

Rrst Internal RST

pull-up resistor 30 – 60 k

Parameter Description Min Typ Max Units Notes

BS Burst duration – 5 – ms 4.7 nF Cs

Fc Burst center frequency – 53 – kHz

Fm Burst modulation, percentage – 18 – %

PW Pulse width – 6000 – ns