Manual

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Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Software Protected Programming

• Fast Read Access Time – 200 ns

• Low Power Dissipation

– 15mAActiveCurrent

– 40 µA CMOS Standby Current

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

• Two 16K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms Max.

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Minimum Endurance 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Commercial and Industrial Temperature Ranges

Description

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 200 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 40 µA. The device

4-megabit

(512K x 8)

Single 2.7-volt

Battery-Voltage

™

Flash Memory

AT29BV040A

Rev. 0383F–FLASH–05/02

TSOP Top View

Type 1

Pin Configurations

Pin Name Function

A0 - A18 Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

A11

A9

A8

A13

A14

A17

WE

VCC

A18

A16

A15

A12

A7

A6

A5

A4

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A0

A1

A2

A3

CBGA

Top View

A

B

C

D

E

F

G

H

1

234

A7

A6

A5

A4

A3

A2

A1

A0

A18

A16

A15

A12

I/O0

I/O1

I/O2

GND

A14

A17

WE

VCC

I/O3

I/O4

I/O5

I/O6

A13

A8

A9

A11

I/O7

CE

A10

OE

Summary of content (15 pages)

PAGE 1
Features • • • • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programming Fast Read Access Time – 200 ns Low Power Dissipation – 15 mA Active Current – 40 µA CMOS Standby Current Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 2048 Sectors (256 Bytes/Sector) – Internal Address and Data Latches for 256 Bytes Two 16K Bytes Boot Blocks with Lockout Fast Sector Program Cycle Time – 20 ms Max.
PAGE 2
endurance is such that any sector can be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 2.7-volt-only Flash memories. To allow for simple in-system reprogrammability, the AT29BV040A does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is similar to reading from an EPROM.
PAGE 3
AT29BV040A Any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, a read operation will effectively be a polling operation. After the software data protection’s 3-byte command code is given, a byte load is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high.
PAGE 4
and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. OPTIONAL CHIP ERASE MODES: The entire device may be erased by using a 6-byte software code. Please see Software Chip Erase application note for details. BOOT BLOCK PROGRAMMING LOCKOUT: The AT29BV040A has two designated memory blocks that have a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled.
PAGE 5
AT29BV040A DC and AC Operating Range Operating Temperature (Case) VCC Power Supply Note: AT29BV040A-20 AT29BV040A-25 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C 2.7V to 3.6V 2.7V to 3.6V Com. Ind. (1) 1. After power is applied and VCC is at the minimum specified data sheet value, the system should wait 20 ms before an operational mode is started.
PAGE 6
AC Read Characteristics AT29BV040A-20 Symbol Parameter tACC Min Max AT29BV040A-25 Min Max Units Address to Output Delay 200 250 ns (1) CE to Output Delay 200 250 ns tOE(6) OE to Output Delay 0 80 0 120 ns tDF(7)(8) CE or OE to Output Float 0 50 0 60 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE 0 ns AC Read Waveforms Notes: 6 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 6.
PAGE 7
AT29BV040A Input Test Waveforms and Measurement Level tR, t F < 5 ns Output Test Load Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 1. These parameters are characterized and not 100% tested.
PAGE 8
AC Byte Load Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Set-up Time 10 ns tAH Address Hold Time 100 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 200 ns tDS Data Set-up Time 100 ns tDH, tOEH Data, OE Hold Time 10 ns tWPH Write Pulse Width High 200 ns AC Byte Load Waveforms(1)(2) WE Controlled CE Controlled 8 AT29BV040A 0383F–FLASH–05/02
PAGE 9
AT29BV040A Program Cycle Characteristics Symbol Parameter Min Max Units tWC Write Cycle Time 20 ms tAS Address Set-up Time 10 ns tAH Address Hold Time 100 ns tDS Data Set-up Time 100 ns tDH Data Hold Time 10 ns tWP Write Pulse Width 200 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High 150 200 µs ns Software Protected Program Waveform Notes: 1. OE must be high when WE and CE are both low. 2.
PAGE 10
Data Polling Characteristics(1)(2) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min Max OE to Output Delay tWR Write Recovery Time Units 10 ns 10 ns (2) tOE Notes: Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics.
PAGE 11
AT29BV040A Software Product Identification Entry(1) LOAD DATA AA TO ADDRESS 5555 Boot Block Lockout Feature Enable Algorithm(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 90 TO ADDRESS 5555 PAUSE 20 mS LOAD DATA 80 TO ADDRESS 5555 ENTER PRODUCT IDENTIFICATION MODE(2)(3) LOAD DATA AA TO ADDRESS 5555 Software Product Identification Exit(1) LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA AA TO ADDRESS 5555 LOAD DATA 40 TO ADDRESS 5555 LOAD DATA 55 TO AD
PAGE 12
Ordering Information ICC (mA) tACC (ns) Active Standby 200 15 250 Ordering Code Package Operation Range 0.04 AT29BV040A-20CC AT29BV040A-20TC 32C1 32T Commercial (0° to 70°C) 15 0.05 AT29BV040A-20CI AT29BV040A-20TI 32C1 32T Industrial (-40° to 85°C) 15 0.04 AT29BV040A-25CC AT29BV040A-25TC 32C1 32T Commercial (0° to 70°C) 15 0.
PAGE 13
AT29BV040A Packaging Information 32C1 – CBGA E A1 Ball ID D A1 Top View A E1 1.30 REF e A1 Ball Corner Side View 2.20 REF A COMMON DIMENSIONS (Unit of Measure = mm) B C SYMBOL D D1 E E F E1 G D MIN NOM MAX 4.90 5.00 5.10 NOTE 2.4 TYP 9.90 10.00 10.10 H e 4 3 2 1 D1 5.6 TYP A – – 1.20 A1 0.25 – – Øb e 0.80 BSC Bottom View b 0.40 TYP 2/13/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 32C1, 32-ball (4 x 8 Array), 0.80 mm Pitch, 5.0 x 10.0 x 1.
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32T – TSOP PIN 1 0º ~ 8º c Pin 1 Identifier D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.95 1.00 1.05 D 19.80 20.00 20.20 D1 18.30 18.40 18.50 Note 2 E 7.90 8.00 8.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-142, Variation BD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.
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Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg.