Instruction Manual

33
3600H–DFLASH–11/2012
AT26DF081A
Notes: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
12.7 Input Test Waveforms and Measurement Levels
t
R
,t
F
< 2 ns (10% to 90%)
12.8 Output Test Load
12.5 Program and Erase Characteristics
Symbol Parameter Min Typ Max Units
t
PP
(1)
Page Program Time (256 Bytes) 1.2 5 ms
t
BP
Byte Program Time 7 µs
t
BLKE
(1)
Block Erase Time
4 Kbytes 50 200
ms32 Kbytes 250 600
64 Kbytes 400 950
t
CHPE
(2)
Chip Erase Time 6 14 sec
t
WRSR
(2)
Write Status Register Time 200 ns
12.6 Power-up Conditions
Parameter Min Max Units
Minimum V
CC
to Chip Select Low Time 50 µs
Power-up Device Delay Before Program or Erase Allowed 10 ms
Power-on Reset Voltage 1.5 2.5 V
AC
DRIVING
LEVELS
AC
MEASUREMENT
LEVEL
0.45V
1.5V
2.4V
DEVICE
UNDER
TEST
30 pF