User's Guide

Revision 1.0 Page 19 of 75
nRF24L01+ Preliminary Product Specification
5.5 Crystal specifications
Table 11. Crystal specifications
5.6 DC characteristics
Table 12. Digital input pin
Table 13. Digital output pin
5.7 Power on reset
Table 14. Power on reset
Symbol Parameter (condition) Notes Min. Typ. Max. Units
Fxo Crystal Frequency 16 MHz
ΔF Tolerance
a b
a. Frequency accuracy including; tolerance at 25ºC, temperature drift, aging and crystal loading.
b. Frequency regulations in certain regions set tighter requirements for frequency tolerance (For
example, Japan and South Korea specify max. +/- 50ppm)
±60 ppm
C
0
Equivalent parallel capacitance 1.5 7.0 pF
C
L
Load capacitance 8 12 16 pF
ESR Equivalent Series Resistance 100 Ω
Symbol Parameter (condition) Notes Min. Typ. Max. Units
V
IH
HIGH level input voltage 0.7VDD
5.25
a
a. If the input signal >3.6V, the VDD of the nRF24L01+ must be between 2.7V and 3.3V (3.0V±10%)
V
V
IL
LOW level input voltage VSS 0.3VDD V
Symbol Parameter (condition) Notes Min. Typ. Max. Units
V
OH
HIGH level output voltage (I
OH
=-0.25mA) VDD -0.3 VDD V
V
OL
LOW level output voltage (I
OL
=0.25mA) 0.3 V
Symbol Parameter (condition) Notes Min. Typ. Max. Units
T
PUP
Power ramp up time
a
a. From 0V to 1.9V.
100 ms
T
POR
Power on reset
b
b. Measured from when the VDD reaches 1.9V to when the reset finishes.
1100ms