Product Info

LPWA Module Series
BG600L-M3 Hardware Design
BG600L-M3_Hardware_Design 41 / 83
 Keep (U)SIM card signals away from RF and VBAT traces.
 Assure the ground trace between the module and the (U)SIM card connector short and wide. Keep
the trace width of ground and USIM_VDD no less than 0.5 mm to maintain the same electric
potential.
 To avoid cross-talk between USIM_DATA and USIM_CLK, keep them away from each other and
shield them with surrounded ground. USIM_RST should also be surrounded with ground.
 In order to offer good ESD protection, it is recommended to add a TVS diode array with parasitic
capacitance not exceeding 15 pF. In order to facilitate debugging, it is recommended to reserve
series resistors for the (U)SIM signals of the module. The 33 pF capacitors are used for filtering
interference of EGSM900. Please note that the (U)SIM peripheral circuit should be close to the
(U)SIM card connector.
 The pull-up resistor on USIM_DATA line can improve anti-jamming capability when long layout trace
and sensitive occasion are applied, and should be placed close to the (U)SIM card connector.

“*” means under development.
2.10 USB Interface
BG600L-M3 provides one integrated Universal Serial Bus (USB) interface which complies with the USB
2.0 specification and supports operation at low-speed (1.5 Mbps) and full-speed (12 Mbps) modes. For
more details about USB 2.0 specification, please visit https://www.usb.org/.
The USB interface is used for AT command communication, data transmission, software debugging and
firmware upgrade. The following table shows the pin definition of USB interface.
Table 11: Pin Definition of USB Interface
Pin Name Pin No. I/O Description Comment
USB_VBUS 32 AI USB connection detect Input range: 1.3–1.8 V
USB_DP 24 IO USB differential data (+)
Require differential
impedance of 90 Ω
USB_DM 25 IO USB differential data (-)
USBPHY_3P3 17 PI Power supply for USB PHY circuit Vnorm = 3.3 V
USBPHY_3P3_EN 8 DO
External LDO enable control for
USB
1.8 V power domain
GND 31 Ground
NOTE