Product Info

LTE Module Series
EG21-G MINIPCIE Hardware Design
EG21-G_MINIPCIE_Hardware_Design 33 / 48
4.3. I/O Requirements
The following table shows the I/O requirements of EG21-G MINIPCIE.
Table 17: I/O Requirements
1. The PCM and I2C interfaces belong to 1.8V power domain and other I/O interfaces belong to
VCC_3V3 power domain.
2. The maximum voltage value of V
IL
for PERST# signal and W_DISABLE# signal is 0.5V.
4.4. RF Characteristics
The following tables show the conducted RF output power and receiving sensitivity of EG21-G MINIPCIE
module.
Table 18: EG21-G MINIPCIE Conducted RF Output Power
Parameter
Description
Min.
Max.
Unit
V
IH
Input High Voltage
0.7 × VCC_3V3
VCC_3V3 + 0.3
V
V
IL
Input Low Voltage
-0.3
0.3 × VCC_3V3
V
V
OH
Output High Voltage
VCC_3V3 - 0.5
VCC_3V3
V
V
OL
Output Low Voltage
0
0.4
V
Frequency
Max.
Min.
GSM850/EGSM900
33dBm±2dB
5dBm±5dB
DCS1800/PCS1900
30dBm±2dB
0dBm±5dB
GSM850/EGSM900 (8-PSK)
27dBm±3dB
5dBm±5dB
DCS1800/PCS1900 (8-PSK)
26dBm±3dB
0dBm±5dB
WCDMA B1/B2/B4/B5/B6/B8/B19
24dBm+1/-3dB
< -49dBm
LTE-FDD B1/B2/B3/B4/B5/B7/B8/B12
23dBm±2dB
< -39dBm
NOTES
S