Product Info

EG95_Seri
e
LTE-FDD
B
6.7. Ele
c
The modul
e
to ESD han
packaging
application
t
The followi
n
Table 46:
E
Tested In
t
VBAT, G
N
All Antenn
Other Inte
r
6.8. The
In order to
principles f
o
 On cu
s
especi
a
 Do not
order t
o
 Do not
to ens
u
 The re
f
vias as
 Make
s
 Accord
or the
o
 The h
e
Mean
w
modul
e
e
s_Hardw
a
B
66 (10MH
z
c
trostati
c
e
is not prot
e
dling preca
u
procedures
t
hat incorp
o
n
g table sho
E
lectrostati
c
t
erfaces
N
D
a Interface
s
r
faces
rmal Co
n
achieve be
o
r thermal c
o
s
tomers’ P
C
a
lly high po
w
place com
p
o
facilitate a
apply sold
e
u
re better h
e
f
erence gro
u
many as p
o
s
ure the gro
u
ing to custo
o
pposite sid
e
atsink sho
u
w
hile, a ther
m
e
/PCB.
a
re_Design
z
) -9
7
c
Disch
a
e
cted again
u
tions that t
y
must be
a
o
rates the m
o
ws the mod
c
Discharg
e
C
o
±
5
s
±
4
±
0
n
siderat
i
tter perfor
m
o
nsideratio
n
C
B design,
w
er compon
p
onents on
dding of he
a
e
r mask on t
e
at dissipati
o
u
nd of the a
r
o
ssible for
b
u
nd pads of
mers’ appli
c
e of the PC
B
u
ld be desi
g
m
al pad wit
h
7
.7dBm
a
rge
st electrost
a
y
pically app
a
pplied thr
o
o
dule.
ule’s electr
o
e
Characte
r
o
ntact Dis
c
5
4
0
.5
i
on
m
ance of th
e
n
:
please kee
ents such a
the opposi
t
a
tsink when
he opposite
o
n perform
a
r
ea where t
h
b
etter heat d
the modul
e
c
ation dema
n
B
area whe
r
g
ned with a
s
h
high ther
m
8
-98.8dB
m
a
tic dischar
g
ly to ESD s
e
o
ughout th
e
o
static disch
r
istics(25º
C
c
harge
e
module,it
p placeme
n
s ARM proc
t
e side of t
h
necessary.
side of the
a
nce.
h
e module i
s
issipation.
e
and PCB
a
n
ds, the he
a
r
e the modu
s
many fins
m
al conduct
8
7 / 103
m
-10
g
e (ESD) in
e
nsitive co
m
e
processin
g
arge chara
c
C
, 45% Rela
A
ir Disc
h
±10
±8
±1
is recomm
e
n
t of the m
o
essor, audi
o
h
e PCB are
a
PCB area
w
s
mounted s
a
re fully con
n
a
tsink can b
e
le is mount
e
as possibl
e
ivity should
LTE St
a
EG95 Se
r
1.2dBm
general. C
o
m
ponents. P
r
g
, handling
c
teristics.
tive Humid
h
arge
e
nded to c
o
o
dule awa
y
o
power am
p
a
where th
e
w
here the m
hould be c
o
n
ected.
e
mounted
o
e
d, or both
o
e
to increas
e
be used b
e
a
ndard Mo
d
r
ies Hard
w
-95.8
d
o
nsequently
,
r
oper ESD
h
and oper
a
ity)
Unit
kV
kV
kV
o
mply with
t
y
from heat
i
p
lifier, powe
r
e
module is
odule is mo
o
mplete, an
d
o
n the top o
f
o
f them.
e
heat diss
i
e
tween the
h
d
ule Serie
s
w
are Desig
n
d
Bm
,
it is subje
c
h
andling an
d
a
tion of an
y
t
he followin
g
i
ng source
s
r
supply, et
c
mounted, i
n
unted, so a
s
d
add groun
d
f
the modul
e
i
pation are
a
h
eatsink an
d
s
n
c
t
d
y
g
s
,
c
.
n
s
d
e
,
a
.
d