Product Info

EG95_Seri
e
V
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V
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The modul
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equipped w
recommen
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lines, pleas
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Transistor
c
NOTE
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provides 1
ith a 3.3V U
d
ed. The foll
VDD
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mple with
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refer to th
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TS
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5
0.1 μF
1
2
Figure
2
ti.com form
o
t
ransistor tr
a
a
t of circuit
s
M
CU/ARM
TXD
RXD
RTS
CTS
GPIO
GPIO
EINT
GND
Figure 2
1
o
n is not sui
t
3
5
i
nterfaces.
A
c
e. A level t
r
e
shows are
f
VCC
A
OE
A1
A2
A3
A4
A5
A6
A7
A8
5
1K
2
0K
10K
2
0: Referen
c
o
re informa
t
a
nslation ci
r
s
in solid lin
e
10K
VCC_MCU
VDD_EXT
1
: Referenc
t
able for ap
p
5
A
level trans
r
anslator T
X
f
erence de
s
A
V
C
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Translator
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e Circuit
w
t
ion.
r
cuit is sho
w
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s, but plea
s
V
D
4.7K
V
4.7K
1 nF
1 nF
e Circuit w
i
p
lications w
i
5
1 / 103
0.45
1.8
lato
r
should
X
S0108EP
W
s
ign.
C
CB
G
N
D
B1
B2
B3
B4
B5
B6
B7
B8
51
K
0.1 μF
w
ith Transl
a
w
n as below
.
s
e pay atten
D
D_EXT
10K
V
DD_EXT
i
th Transis
t
i
th high bau
d
LTE St
a
EG95 Se
r
be used if
c
W
R provided
K
RI_M
C
DCD
_
RTS
_
RXD
_
DTR
_
CTS
_
TXD
_
VDD
_
a
to
r
Chip
.
For the de
s
tion to the
d
TXD
RXD
RTS
CTS
DTR
RI
GND
DCD
Module
t
or Circuit
d
rates exc
e
a
ndard Mo
d
r
ies Hard
w
V
V
c
ustomers’
a
by Texas I
n
CU
_
MCU
_
MCU
_
MCU
_
MCU
_
MCU
_
MCU
_
MCU
sign of circ
u
d
irection of
c
e
eding 460
k
d
ule Serie
s
w
are Desig
n
a
pplication i
s
n
struments i
s
u
its in dotte
d
c
onnection.
k
bps.
s
n
s
s
d