EG G95Series s Hardw warre Des D sign n LTES Standard Module Series Versio on: 1.8 Date: 2020-09 9-03 minary Status: Prelim www.quec ctel.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Our aim is s to provide customers with tim mely and co omprehensive service e. For any assistance e, please con ntact our co ompany hea adquarters: Quectel Wireless Solu utions Co., Ltd. S Bu usiness Park Phase III (Area ( B), No o.1016 Tianlin Road, Min nhang Distriict, Shangha ai Building 5, Shanghai 200233, Ch hina Email: info@quecttel.com Tel: +86 21 5108 6236 al office. Fo or more info ormation, please visit:h http://www.q quectel.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Copyright © Quectel Wireless W So olutions Co o., Ltd. 2020 0. All rights reserved.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Abou ut the e Doc cument Revision History Version 1.0 1.1 1.2 Date A Author Des scription 2017-03-22 FelixYIN/ Ye Yeoman CHE EN/ Ja ackie WANG G Initiial Yeoman CHE Ye EN/ R WANG Rex 1. Added band B28A. he descriptio on of UMTS S and GSM 2. Updated th features in Table 2. 3. Updated thefunctional diagram in Figure F 1. 4. Updated module m ope erating frequ uencies in Table 21. 5. Updated cu urrent consu umption in Ta able 26. 6.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 9. Updated module m ope erating frequencies in Table 22. 10. Added description of GNSS antenna interface in n Chapter 5..2. 11. Updated antenna a requ uirements in Table 25. 12. Updated RF R output po ower in Table e 32. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 1.3 2019-05 5-24 Ward WANG// W Nathan LIU/ R WANG Rex 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. EG95_Serie es_Hardwa are_Design Added variant v EG95-EX and related information n.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Chapter 3..16. 21. Added desscription of USB_BOOT T interface in Chapterr 3.18. 22. Updated description d of manufac cturing and soldering in Chapter 8 8.2. 1. 2. 1.4 1.5 1.6 1.7 2019-07-05 2019-08-09 2019-11--07 2020-04-15 Updated supported prrotocols (Tab ble 2). Updated timing of turn ning on module (Figure 12). DFOTA is developed.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n soldering in nformation (C Chapter 8.2). 1.8 2020-08-24 Frank WANG G EG95_Serie es_Hardwa are_Design Add ded EG95-AU UX and relatted informatio on (Table 1, 36 and43).
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Contents s About the Document D .................................................................................................................................... 3 Contents ......................................................................................................................................................... 7 Table Index x ...................................................................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 3.13. 3.14. 3.15. 3.16. 3.17. 3.18. SPI Interfacce ........................................................................................................................... 54 4 Network Sttatus Indicattion ....................................................................................................... 55 STATUS ..........................................................................................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 12 Appendix D EDGE E Modulatio on and Cod ding Schemes ..................................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Table Index Table 1: Freq quency Band ds of EG95 Series S Module ........................................................................................... 19 9 Table 2: Keyy Features off EG95 Modu ule............................................................................................................... 20 0 Table 3: IO Parameters P D Definition ........................................................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Table 43: EG G95-NAX Co onducted RF Receiving Sensitivity S ................................................................................ 85 5 Table 44: EG G95-NAXD Conducted C R Receiving Sensitivity ............................................................................. 85 RF 5 Table 45: EG G95-AUX Co onducted RF Receiving Sensitivity S ................................................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Figure In ndex Figure 1: Functional Diag gram .............................................................................................................................. 23 3 n Assignmen nt (Top View)................................................................................................................... 26 6 Figure 2: Pin Figure 3: Sle eep Mode Ap pplication via a UART ...........................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Figure 42: EG95-E E Modu ule Bottom Dimensions D (Top View) .............................................................................. 91 1 Figure 43: EG95-EX E Mod dule Bottom Dimensions (Top View) ............................................................................ 92 2 Figure 44: Recommende R ed Footprint (Top View) ..................................................................................................
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 1 In ntrod ductio on This docum ment defines EG95 seriessmodule, an nd describes s its air interrface and ha ardware interrfaces which h are connectted with customers’ app plications. This docum ment can he elp customers quickly understand u module inte erface speciifications, electrical and d mechanical details as well w as otherr related info ormation of EG95 E seriess module.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n ❒ ❒ ❒ ❒ ❒ ❒ ❒ ❒ ❒ ❒ WCDM MA II :≤8.000dBi WCDM MA IV :≤5.00 00dBi WCDM MA V :≤9.416dBi LTE Ba and 2 :≤8.00 00dBi LTE Ba and 4:≤5.00 00dBi LTE Ba and 5 :≤9.416dBi LTE Ba and 12 :≤8.7 734dBi LTE Ba and 13:≤9.1 173dBi LTE Ba and 25:≤8.0 000dBi LTE Ba and 26:≤9.4 416dBi dule must no ot transmit siimultaneoussly with any other antenna or transm mitter 5. This mod 6.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n commonlyy used meth hods for acccess to remo ove the module so that the t FCC ID o of the module is visible; then an additional permanent lab bel referring to the enclosed module:“Contains T Transmitter Module M FCC C 202008EG95 5NAXD” or “Contains “ FC CC ID: XMR R202008EG95NAXD” m must be used d.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 1.2. Safe ety Inform mation The followin ng safety pre ecautions must m be obse erved during g all phases of operation, such as usage, u serviice or repair of any cellularr terminal orr mobile inco orporating EG95series E m module.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n In n locations with w potentia ally explosiv ve atmosphe eres, obey a all posted signs to turn offf wireless devices d succh as your phone p or otther cellularr terminals. Areas with po otentially exxplosive atm mospheres in nclude fuelliing areas, b below decks s on boats, fu uel or chem mical transfe er or stora age facilitiess, areas wh here the air contains ch hemicals or particles succh as grain, dust or mettal powders,, etc.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 2 P Produ uct Co oncep pt 2.1. Gen neral Des scription EG95seriess module iss an embed dded 4G wireless w com mmunication module w with receive diversity. It supportsLTE E-FDD/WCD DMA/GSM wireless communica ation, andprovides d data conn nectivity on n LTE-FDD,D DC-HSDPA, HSPA+, HS SDPA, HSUP PA, WCDMA A,EDGE and dGPRSnetw works. It can also provide e 1) voice functiionality to meet m custom mers’ speciffic applicatio on demandss.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 2. 2) GNSS S function iss optional. With a compact profile of 29.0mm ×25.0mm ×2.3mm, × EG G95 can mee et almost alll requireme ents for M2M M applicationss such as au utomotive, smart metering, tracking system, security, route er, wireless POS, P mobile e computing device, d PDA A phone, tab blet PC, etc. EG95 is an SMD type module m whicch can be em mbedded intto applications through iits 106 LGA pads.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n CSD D: 9.6 kbps GPR RS: Supp port GPRS multi-slot m cla ass 33(33 byy default) Codiing scheme:: CS-1, CS-2 2, CS-3 and CS-4 Max 107 kbps (D DL), Max 85 5.6 kbps (UL L) GE: EDG Supp port EDGE multi-slot m cla ass 33(33 byy default) Supp port GMSK and 8-PSK K for differe ent MCS (M Modulation and Coding g Sche eme) Dow wnlink coding g schemes: MCS M 1-9 Uplin nk coding scchemes: MC CS 1-9 Max 296 kbps (D DL)/Max 236 6.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Debu ug UART: Used d for Linux console c and log output 1152 200bps baud d rate SPI Interfa ace Provvides a duplex, synchro onous and serial comm munication link l with the e perip pheral devices. Dediicated to one e-to-one con nnection, without chip selection. 1.8 Voperation V v voltage with clock rates up to 50MH Hz.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 2.3. Functional Diagram D The followin ng figure sho ows a block diagram of EG95 and illustrates the e major funcctional parts s.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 2.4. Evaluation Board B In order to o help custo omers deve elop applica ations with EG95,Quecctel supplie es an evalu uation board d (UMTS<E E EVB), US SB data cab ble, earphone, antenna a and otherr peripheralss to controll or test the e module.For more details, please re efer to docum ment [7].
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 3 A Applic cation n Inte erface es 3.1. Gen neral Des scription EG95is equ uipped with 62 SMT pa adsand44-pin n ground/reserved padss that can b be connecte ed to cellular application platform. The sub bsequent chapters will provid dedetailed description ns of the e followingfun nctions/interffaces.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 3.2. Pin Assignm ment GND NC VBAT_RF VBAT_RF VBAT RF GND GND RESERVED (Pin 56 on EG95-E) ANT_DIV (EG95-NA/-EX/- NAX/-AUX) NC GND GND ANT MAIN ANT_MAIN GND GND The followin ng figure sho ows the pin assignment of EG95 mo odule.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTES 1. 2. 3. 4. 1) PWRK KEY output voltage is 0.8V because e of the diod de drop in th he Qualcomm m chipset. Keep all a RESERVE EDpins and unused pinss unconnectted. GND pa ads should be connecte ed to ground d in the desig gn. Please note that th he definition of pin 49 an nd 56 are diffferent amon ng EG95-E a and EG95-N NA/-EX/-NA AX/-AUX. For more detaiils, please re efer to Table e 4. 3.3.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n VBAT_RF 52, 53 VDD_EXT T 29 GND 3, 31, 48 8, 50, 54, 55, 5 58, 59, 61, 6 62, 67–7 74, 79–82, 89–91, 100–106 6 PI PO Power su upply for module’ss RF part Provide 1.8 1 V for external circuit c Vmax = 4.3V Vmin = 3.3 3V Vnorm = 3.8V 3 It must be provided p with h sufficient cu urrent up to 1.8A in a bu urst transmission. Vnorm = 1.8 V IOmax = 50 0mA Power supp ply for external GP PIO’s pull up p circuits.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n USB_DP USB_DM 9 10 IO USB diffe erential data bus (+) USB 2.0 Compliant. C Require differential impedanc ce of 90 Ω. IO USB diffe erential data bus (-) USB 2.0 Compliant. C Require differential impedanc ce of 90 Ω. I/O Descripttion (U)SIM Intterfaces Pin Name Pin No. N USIM_GND 47 DC Chara acteristics Commentt Specified d ground for (U)SIM M card IOmax = 50mA USIM1_VD DD 43 PO Power su upply for (U)SIMca ard For 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n USIM1_RS ST USIM1_ PRESENC CE 44 42 DO DI Reset sig gnal of (U)SIMca ard (U)SIMca ard insertion detection For 1.8 V (U)SIM: VOLmax = 0.45V VOHmin = 1.35V For 3.0 V (U)SIM: VOLmax = 0.45V VOHmin = 2.55V VILmin = -0 0.3V VILmax = 0.6V 0 VIHmin = 1.2V 1 VIHmax = 2.0V For 1.8 V (U)SIM: Vmax = 1..9V Vmin = 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n USIM2_ PRESENC CE 83 DI (U)SIMca ard insertion detection VILmin = -0 0.3V VILmax = 0.6V 0 VIHmin = 1.2V 1 VIHmax = 2.0V 1.8 V pow wer domain. If unused, keep it open. I/O Descripttion DC Chara acteristics Commentt DO Ring indicator VOLmax = 0.45V VOHmin = 1.35V 1.8 V pow wer domain. If unused, keep it open. DO Data carrrier detection n VOLmax = 0.45V VOHmin = 1.35V 1.8 V pow wer domain. If unused, keep it open.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n VIHmax = 2.0V PCM Interrface Pin Name Descripttion DC Chara acteristics Commentt PCM data input VILmin = -0 0.3V VILmax = 0.6V 0 VIHmin = 1.2V 1 VIHmax = 2.0V 1.8 V pow wer domain. If unused, keep it open. PCM data output VOLmax = 0.45V VOHmin = 1.35V 1.8 V pow wer domain. If unused, keep it open. PCM data frame synchron nization signal VOLmax = 0.45V VOHmin = 1.35V VILmin = -0 0.3V VILmax = 0.6V 0 VIHmin = 1.2V 1 VIHmax = 2.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n converterr SPI Interfa ace1) Pin Name I/O Descripttion DC Chara acteristics Commentt DO Clock sig gnal of SPI interface VOLmax = 0.45V VOHmin = 1.35V 1.8 V pow wer domain. If unused, keep it open. DO Master output slave input of SPI S interface VOLmax = 0.45V VOHmin = 1.35V 1.8 V pow wer domain. If unused, keep it open. 28 DI Master in nput slave output off SPI interface VILmin = -0 0.3V VILmax = 0.6V 0 VIHmin = 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n USB_BOO OT 75 DI Force the e module to enter emergency e download d mode VILmin = -0 0.3V VILmax = 0.6V 0 VIHmin = 1.2V 1 VIHmax = 2.0V 1.8 V pow wer domain. It is recom mmended to reserve th he test points. I/O Descripttion DC Chara acteristics Commentt RESERVE ED Pins Pin Name NC RESERVE ED Pin No. 1,2, 11–14, 16, 51,, 57, 63– –66, 76–78,, 88, 92– –99 18, 25,, 56 NC Keep thes se pins unconnec cted.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n level. During this mode, the module can n still receive e paging me essage, SMS, voice calll and TCP/UDP T da ata from the network norrmally. Power Dow wn Mode In thiss mode, the power man nagement un nit shuts dow wn the power supply. Softwar S goess Operating voltage (co inactivve. The se erial interfacce is not accessible. a onnected to o VBAT T_RF and VB BAT_BB) remains applie ed. 3.5. Pow wer Savin ng 3.5.1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 3.5.1.2. US SB Applicattion with US SB Remote e Wakeup Fu unction If the host supports USB B suspend/rresume and remote wak keup function ns, the follow wing three preconditions p s must be me et to let the module m ente er sleep mod de. LK=1comma andto enable e sleep mod de. Execute AT+QSCL e the DTR is held at high h level or keep it open.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Modu ule Host VDD USB_ _VBUS US SB_DP USB_DP US SB_DM USB_DM AP_R READY GPIO RI EINT GND GND Figu ure 5: Sleep p Mode App plication witth RI Sending data to EG G95via USB B will wake up u the module. When modulehas m a URC to report, RI sign nal will wake e up the host. SB Applicattion without USB Susp pend Functtion 3.5.1.4.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTE Please pay attention to o the level match m show wn in dotted line betwee en the modu ule and the host.Please e refer to doc cument [1] for f more dettails about EG95 E power manageme ent applicatio on. 3.5.2. Airplane Mod de When the module m ente ers airplane mode, the RF R function will be disabled, and all AT comma ands related d toit will be in naccessible.. This mode can be set viathe follow wing ways.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n VBAT_BB 32,33 Power supp ply for module’s baseband part. p 3.3 3 3.8 4.3 V GND 3, 31, 48,50, 4 54, 55,,58, 59, 61,62, 67–74, 79–82,,89–91, 100–10 06 Ground - 0 - V 3.6.2. Dec crease Voltage Drop p The power supply rang ge of the mo odule is from m 3.3Vto4.3 3V. Please make m sure th hatthe inputt voltage willl never drop below 3.3V V. The follow wing figure shows the voltage dro op during bu urst transmiission in 2G G network.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n VBAT T VBAT T_RF VBAT T_BB + D1 WS4..5D3HV C1 100μF + C2 C3 C4 C5 100 nF 33 3 pF 10 pF 100 μF C6 C7 100 nF n C8 33 pF 10 pF Module Figu ure 8: Star Structure S of o Power Su upply 3.6.3. Refference De esign for Power P Supply Power desig gn for the module m is verry importantt, asthe perfformance of the module e largely dep pends on the e power sourrce.
andard Mod dule Series s LTE Sta EG95 Serries Hardw ware Design n NOTE In order to avoid dama aging interna al flash, ple ease do not switch off the power supply when the module e works norm mally. Only affter the mod dule is shutd down by PW WRKEY or AT command d, then the power p supplyy can be cut off. o 3.6.4. Monitor the Power P Sup pply AT+CBC co ommand can n be used to o monitor the e VBAT_BB voltage valu ue. For more e details, ple ease refer to o document [2]. [ 3.7. Pow wer-on/offfScenarios 3.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n The other way w to contrrol the PWR RKEY is usiing a button n directly. When W pressin ng the key, electrostaticc strike may generate g from the fingerr. Therefore, aTVS comp ponent is ind dispensable to be placed d nearby the e button for ESD E protectio on. A referen nce circuit iss shownin th he following figure.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTES 1. Please make sure that t VBAT iss stable befo ore pulling down d PWRK KEY pin. It iss recommen nded that the e time bettween powe ering up VBA AT and pullin ng down PW WRKEY pin is no less tha an 30ms. 2. PWRKE EY can be pulled down directly d to GND G with a recommende r ed 10kΩ ressistor if module needs to o be powe ered on auto omatically and shutdown is not needed. 3.7.2.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTES 1. 2. In order to avoid da amaging inte ernal flash, please p do no ot switch offf the power ssupply when n the module e works normally. n On nly after the e module is shut down by PWRKEY or AT com mmand, the en the power supply can be cut off. o When turning off module with the AT command, c please p keep p PWRKEY at high lev vel after the e executiion of the co ommand.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n S2 R RESET_N TVS Close to S2 Fiigure 15: Re eference Ciircuit of RE ESET_N by Using Butto on The reset sccenario is illustrated inth he following figure. VBA AT ≤ 460 ms ≥ 150 ms V IH ≥ 1.3 V RES SET _N VIL ≤ 0 .5 V Mod dule Stat us Running Ressetting Restart Fig gure 16: Tim ming of Res setting Mod dule NOTES 1. 2. Use RE ESET_N only when faile ed toturn off the module by AT+QPO OWDcomma and and PW WRKEY pin.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Table 9: Pin n Definition n of (U)SIM Interfaces Pin Name Pin No. N I/O Description Com mment her 1.8 V or 3.0 V is Eith sup pported by th he module auto omatically.
andard Mod dule Series s LTE Sta EG95 Serries Hardw ware Design n VDD D_EXT USIM M_VDD 51K 15K 100 nF USIM_ _GND (U)SIM Card Connecttor USIM_ _VDD Mod dule USIM_ _RST 0R USIM_ _CLK USIM_ _PRESENCE E 0R USIM_ _DATA 0R VCC RST CLK GND D VPP IO O GND 33 pF F 33 pF 33 pF GND GND D Figure 17: Refference Circ cuitof (U)SIMInterface with an 8-p pin (U)SIMC Card Connector If (U)SIM ccard detection function n is not ne eeded, please keep USIM_PRESENCE unco onnected.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Make sure s the bypass capacito or between USIM_VDD and USIM_ _GND less th han 1μF, and place it ass close to t (U)SIM card conne ector as po ossible.If th he ground is complete e on custo omers’ PCB B, USIM_GND can be e connected d to PCB gro ound directly y. To avo oid cross-talk between USIM_DATA A and USIM M_CLK, kee ep them aw way fromeac ch other and d shield them t with su urrounded ground.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Test Points Minimize th hese stubs Module VDD R3 NM_0R R4 NM_0R MCU ESD Array USB_VBUS S L1 USB_DM M USB B_DM USB B_DP USB_DP P Close to Module GND D GND D Figure e 19: Refere ence Circuitt of USB Intterface A common mode cho oke L1 is recommend ded to be added in series betw ween the module m and d customer’sM MCU in orde er to suppresss EMI spurrious transmission.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n The ma ain UART in nterface sup pports 9600b bps, 19200b bps, 38400b bps, 57600bps, 115200b bps, 230400 0 bps, 46 60800 bps, 921600 9 bps and 300000 00 bpsbaud rates, r and th he default is 115200 bps s. It supportss RTS and CTS ha ardware flow w control, and a is used d for AT co ommand co ommunicatio on and data a transmission. The debug UART interface sup pports 11520 00 bpsbaud rate. It is ussed forLinuxx console and log outputt.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n VOL 0 0.45 V VOH 1.3 35 1.8 V The module e provides 1.8 V UART interfaces. i A level translator should be used if ccustomers’ application a iss equipped with a 3.3V UART interfacce. A level trranslator TX XS0108EPW WR provided by Texas In nstruments iss recommend ded. The following figure e shows arefference des sign. 0.1 μF 10K VDD_ _EXT VCCA A VC CCB GND G OE 12 20K VDD_ _MCU 0.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 3.12.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 125 μs P CM_ _CLK 1 2 31 3 32 P CM_S _ Y NC MS B L LS B MS B L LS B P CM_ _DOUT P CM_ _DIN Figure 23: Auxiliary A Mode M Timing g The followin ng table sho ows the pin definition of o PCM and I2C interfacces which ccan be applied on audio o codec desig gn. Table 14: Pin P Definitio on of PCM and a I2C Inte erfaces Pin Name Pin No. N I/O Description C Comment PCM_DIN 6 DI PCM data input 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n PCM_C CLK BCLK K PCM_SY YNC LRCK K PCM_DO OUT DAC PCM_D DIN ADC I2C_S SCL SCL I2C_S SDA SDA INP INN BIAS MICBIAS Module 4.7K 4 7K 4.7K LOUTP LOUTN Codec c 1.8 V Figure 24: Reference e Circuit of PCM P and I2 2C Application with Au udio Codec NOTES 1.. 2.. It is reco ommended to t reserve an a RC (R = 22Ω, 2 C = 22 2pF) circuit on the PCM M lines, espe ecially for PCM_CL LK.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n SPI_MISO O 28 Masterr input slave e output of SPI S interfacce DI 1.8 V p power doma ain The followin ng figure sho ows areferen nce design of o SPI interfface with perripherals. SP PI_CLK SPI_CLK SPI_ _MOSI SPI_MOSI SPI_ _MISO SPI_MISO Module e Periphe erals Figure 25: Refference Circ cuit of SPI Interface I with Periphe erals NOTE The module provides p 1.8 8 VSPI interfface.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Fliicker quicklyy (125ms Hig gh/125ms Low) L Data transsfer is ongoiing Alw ways High Voice calling A reference e circuit is sh hown in the following f figure. VBAT Module 2.2K NETLIGHT T 4.7K 47K F Figure 26: Reference R C Circuit of Ne etwork Stattus Indicato or 3.15. ST TATUS The STATU US pin is se et as the module’s ope eration statu us indicator. It will outp put high level when the e module is powered on.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 3.16. AD DC Interfa ace e provides one analog g-to-digital converter (A ADC) interfface. AT+Q QADC=0 command can n The module beused to read r the voltage value on ADC0 pin. p For morre details ab bout the command, ple ease refer to o document [2]. [ In order to improve the e accuracy of ADC volttage values s, the tracess of ADC sh hould be surrounded byy ground. Table 19: Pin P Definitio on of ADC Interface Pin Name Pin No o.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTE URC can be outputted frrom UART port, p USB AT A port and USB modem m port throu ugh configurration via A AT+QURCCF FG comman nd. The defa ault port is USB AT port. o the RI are e shown as below, b and can c be changed by AT+QCFG="urc c/ri/ring" The default behaviors of Please refer to documen nt [2] for de etails. command.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Mod dule VDD_EXT Test points 4.7K USB B_BOOT Close to testt points TV VS Figure 28:: Reference e Circuit of USB_BOOT T Interface NOTE E1 VBAT m ≥ 500 ms VH = 0.8 V PWRK KEY VDD_E EXT VIL≤ 0.5 5V About 10 00 ms USB_ _BOOT can be b pulled up to o 1.8 V before e VDD_ _EXT Is powe ered up, and th he module willl enterr emerge ncy download mo ode wh en i t iss powe ered on.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 4 G S Receiverr GNSS 4.1. Gen neral Des scription EG95 includ des a fully integrated global naviga ation satellitte system so olution that supports Ge en8C-Lite of o Qualcomm (GPS, GLONASS, BeiD Dou, Galileo and QZSS)). EG95 suppo orts standarrd NMEA-0183 protocol, and outputts NMEA sen ntences at 1 1Hz data update rate via a USB interface by default. By default, EG95 GNS SS engine iss switched off.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Accuracy (GNSS) @ @open sky XTRA ena abled 3.4 s CEP-50 Autonomo ous @open sk ky <2.5 m NOTES 1.. 2.. 3.. Tracking sensitivity: the minimum m GNSS sig gnal power at a which the module can n maintain lo ock (keep positionin ng for at lea ast 3 minutess continuoussly). Reacquissition sensitivity: the min nimum GNS SS signal power required d for the mo odule to main ntain lock within 3 minutes m afte er loss of locck.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 5 A Anten nna In nterfa aces EG95 anten nna interface es include a main antenna interfac ce andanRx--diversity an ntennainterfa ace which iss used toresist the fall of o signals ca aused by high speed movement m a and multipa ath effect, and a a GNSS S antenna interface whicch is only su upported on n EG95-NA//-EX/-NAX/-N NAXD/-AUX X.The imped dance of the e antenna porrts is 50 Ω. 5.1. Main n/Rx-diversityAn ntenna In nterfaces s 5.1.1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n WCDMA B1 B 192 20–1980 2110–21 170 MHz M WCDMA B2 B 185 50–1910 1930–19 990 MHz M WCDMA B4 B 1710–1755 2110–21 155 MHz M WCDMA B5 B 824 4–849 869–894 4 MHz M WCDMA B8 B 880 0–915 925–960 0 MHz M LTE-FDD B1 B 192 20–1980 2110–21 170 MHz M LTE-FDD B2 B 185 50–1910 1930–19 990 MHz M LTE-FDD B3 B 1710–1785 1805–18 880 MHz M LTE-FDD B4 B 1710–1755 2110–21 155 MHz M LTE-FDD B5 B 824 4–849 869–894 4 MHz M LTE
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Ma ain antenna M Module R1 0 0R ANT_MAIN C1 C2 NM NM Div versity anttenna R2 0 0R ANT_DIV C3 C4 NM NM Figure 30:: Reference e Circuit of RF Antenna a Interface NOTES 1.. Keep a proper dista ance between the main antenna and a theRx-d diversityante enna to imp prove the receiving g sensitivity. 2.. ANT_DIV V function is enabledby default.AT T+QCFG="d divctl",0com mmand can be used to o disable receive diversity.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Figure 31: Microstrip Design n on a 2-lay yer PCB Fig gure 32: Co oplanar Wa aveguide Design D on a 2-layer PC CB Figure 33: 3 Coplanar Wavegu uide Design n on a 4-lay yer PCB (L Layer 3 as R Reference Ground) G EG95_Serie es_Hardwa are_Design 65 6 / 103
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Figure 34: 3 Coplanar Wavegu uide Design n on a 4-lay yer PCB (L Layer 4 as R Reference Ground) G In order to ensure e RF performance p e and reliabiility, the follo owing principles should be complie ed with in RF F layout desig gn: Use an n impedance e simulation tool to accu urately contrrol the chara acteristic imp pedance of RF traces to o 50Ω.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n BeiDou (Compass) 15 561.098±2.0 046 MHz QZSS 15 575.42 MHz A reference design of GNSS G antenna is shown n as below. V VDD 0.1 μF 10R R Module e GNSS Antenna 47 nH 100 pF 0R ANT_G GNSS NM NM Figure 35: Reference Circuit of GNSS Antenna A NOTES 1.. 2.. An external LDO can n be selecte ed to supply power acco ording to the active antenna requirem ment.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Active antenna gain: > 0dBi Active antenna embed dded LNA ga ain: < 17dB GSM/WCD DMA/LTE VSWR: ≤2 2 Efficiency:: > 30% Max input power: 50W W Input impe edance: 50Ω Ω Cable inse ertion loss: <1dB < (GSM850,,EGSM900,W WCDMA B5 5/B8, LTE-FDD B5/B8/B12/B13/B20/B2 26/B28) Cable inse ertion loss: <1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n U.FL-LP serial connecto ors listed in the following figure can n be used to match the U U.FL-R-SMT T. Figure 37:Mechan nicals of U.F FL-LP Conn nectors The followin ng figure desscribes the space s factorr of mated connector. Figure 38:S Space Facto or of Mated d Connectorr (Unit: mm m) For more de etails, please visit http:///www.hirose e.com.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 6 Electrrical, Relia E ability y and d R oCharracterristics Radio 6.1. Abs solute Ma aximum Ratings Absolute maximum ratings for pow wer supply and a voltage e on digital and a analog pins of the module are e listed in the following ta able. Table 29: Absolute A Ma aximum Ratings Parameterr Min n. M Max. Un nit VBAT_RF//VBAT_BB -0.3 3 4 4.7 V USB_VBU US -0.3 3 5 5.5 V Peak Curre ent of VBAT T_BB 0 0 0.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Voltage e drop during g burst trransmission Maximu um power co ontrol level on n EGSM900 IVBAT Peak supply curren nt (during transmissionslot) um power co ontrol Maximu level on n EGSM900 USB_VBU US USB co onnection detectio on 3 3.0 400 mV 1.8 8 2.0 A 5.0 0 5.25 5 V 6.3. Ope eration an nd Stora age Temp peratures s The operatio on and stora age tempera aturesare lissted in the fo ollowing table.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 6.4. Currrent Con nsumptio on The values of current co onsumption are shown below. Table 32: EG95-E E Current Consu umption Parameterr Descripttion Con nditions Typ. Unit OFF statte Pow wer down 15 μA AT+ +CFUN=0 (U USB disconn nected) 1.3 mA GSM M DRX = 2 (USB ( discon nnected) 2.3 mA GSM M DRX = 5 (USB ( suspe ended) 2.0 mA GSM M DRX = 9 (USB ( discon nnected) 1.6 mA WCDMA PF = 64 6 (USB disconnected) 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n EDGE data transfer WCDMA A datatranssfer LTE datatranssfer GSM voice call EGS SM900 1DL//4UL @ 29.4 45 dBm 631 mA DCS S1800 4DL/1UL @ 29.14 dBm 177 mA DCS S1800 3DL/2UL @ 29.0 07 dBm 290 mA DCS S1800 2DL/3UL @ 28.9 97 dBm 406 mA DCS S1800 1DL/4 4UL @ 28.8 88 dBm 517 mA SM900 4DL//1UL PCL = 8 @ 26.88 dBm EGS 167 mA EGS SM900 3DL//2UL PCL = 8 @ 26.84 dBm 278 mA EGS SM900 2DL//3UL PCL = 8 @ 26.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n WCDMA A voice call WCDMA B1 @ 22.91 dBm 632 mA WCDMA B8 @ 23.14 dBm 546 mA Table 33: EG95-NA E Cu urrent Cons sumption Parameterr Descripttion Con nditions Typ. Unit OFF statte Pow wer down 13 μA +CFUN=0 (U USB disconn nected) AT+ 1.0 mA WCDMA PF = 64 6 (USB disconnected) 2.2 mA WCDMA PF = 64 6 (USB sus spended) 2.5 mA WCDMA PF = 512 5 (USB disconnected) 1.4 mA LTE E-FDD PF = 64 (USB dis sconnected)) 2.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n WCDMA A voice call LTE E-FDD B5 CH H2525 @ 23 3.39dBm 601 mA LTE E-FDD B12 CH5060 C @ 23.16dBm 2 650 mA LTE E-FDD B13 CH5230 C @ 23.36dBm 2 602 mA WCDMA B2 CH H9938 @ 23 3.34dBm 627 mA WCDMA B4 CH H1537 @ 23 3.47dBm 591 mA WCDMA B5 CH H4357 @ 23 3.37dBm 536 mA Table 34: EG95-EX E Cu urrent Cons sumption Parameterr Descripttion Con nditions Typ.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n GPRS data transfer EDGE data transfer WCDMA A datatranssfer LTE datatranssfer LTE E-FDDPF = 64 6 (USB con nnected) 31.0 mA SM900 4DL//1UL @ 33.0 06 dBm EGS 247.9 mA EGS SM900 3DL//2UL @ 32.9 93 dBm 450.8 mA EGS SM900 2DL//3UL @ 31.1 1 dBm 536.4 mA EGS SM900 1DL//4UL @ 29.7 78 dBm 618 mA DCS S1800 4DL/1UL @ 29.3 3 dBm 144 mA DCS S1800 3DL/2UL @ 29.3 3 dBm 253.4 mA DCS S1800 2DL/3UL @ 29.2 21 dBm 355.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n GSM voice call WCDMA A voice call LTE E-FDD B20 @ 23.21 dBm m 646 mA LTE E-FDD B28 @ 22.76 dBm m 661 mA EGS SM900 PCL L = 5 @ 32.3 36 dBm 259 mA DCS S1800PCL = 0 @ 29.5 dBm d 149 mA WCDMA B1 @ 23.4 dBm 494 mA WCDMA B8 @ 23.6 dBm 608 mA Table 35: EG95-NAX E C Current Con nsumption Parameterr Descripttion Con nditions Typ. Unit OFF statte Pow wer down 11 μA +CFUN=0 (U USB disconn nected) AT+ 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n LTE datatranssfer WCDMA A voice call WCDMA B5 HS SDPA @ 22.39 dBm 502 mA WCDMA B5 HS SUPA @ 22.12 dBm 509 mA E-FDD B2 @ 23.07 dBm m LTE 691 mA LTE E-FDD B4 @ 23.09 dBm m 713 mA LTE E-FDD B5 @ 23.31 dBm m 580 mA LTE E-FDD B12 @ 23.30 dBm m 627 mA LTE E-FDD B13 @ 23.32 dBm m 619 mA LTE E-FDD B25 @ 23.03 dBm m 693 mA LTE E-FDD B26 @ 22.97 dBm m 628 mA WCDMA B2 @ 22.89 dBm 591 mA WCDMA B4 @ 22.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n WCDMA A datatranssfer LTE datatranssfer LTE E-FDDPF = 64 6 (USB disconnected) 17.8 mA LTE E-FDDPF = 64 6 (USB con nnected) 34.7 mA WCDMA B2 HS SDPA @ 21.64 dBm 547 mA WCDMA B2 HS SUPA @ 21.13 dBm 543 mA WCDMA B4HSDPA @ 22.1 15 dBm 554 mA WCDMA B4 HS SUPA @ 22.21 dBm 541 mA WCDMA B5 HS SDPA @ 22.39 dBm 502 mA WCDMA B5 HS SUPA @ 22.12 dBm 509 mA E-FDD B2 @ 23.07 dBm m LTE 691 mA LTE E-FDD B4 @ 23.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n WCDMA PF = 512 5 (USB disconnected) 1.3 mA LTE E-FDD PF = 64 (USB dis sconnected)) 2.3 mA LTE E-FDD PF = 64 (USB su uspend) 2.6 mA LTE E-FDD PF = 256 (USB disconnected d d) 1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n EDGE data transfer WCDMA A datatranssfer PCS S1900 1DL/4 4UL @ 26.4 44 dBm 416.8 mA M850 4DL/1UL PCL = 8 @ 25.75 dB Bm GSM 161.8 mA GSM M850 3DL/2 2UL PCL = 8 @ 25.49 dB Bm 291.8 mA GSM M850 2DL/3 3UL PCL = 8 @ 23.26 dB Bm 410.2 mA GSM M850 1DL/4 4UL PCL = 8 @ 22.01 dB Bm 520.5 mA EGS SM900 4DL//1UL PCL = 8 @ 26.04 dBm 161.5 mA EGS SM900 3DL//2UL PCL = 8 @ 25.86 dBm 294.6 mA EGS SM900 2DL//3UL PCL = 8 @ 23.62 dBm 411.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n LTE datatranssfer GSM voice call WCDMA A voice call LTE E-FDD B1 @ 22.96 dBm m 777.4 mA LTE E-FDD B2 @ 22.79 dBm m 634.4 mA LTE E-FDD B3 @ 23.09 dBm m 697.9 mA LTE E-FDD B4 @ 22.83 dBm m 704.6 mA LTE E-FDD B5 @ 23.05 dBm m 657.1 mA LTE E-FDD B7 @ 22.71 dBm m 765.3 mA LTE E-FDD B8 @ 22.80 dBm m 635.3 mA LTE E-FDD B28 @ 22.84 dBm m 670.0 mA LTE E-FDD B66 @ 22.73 dBm m 725.9 mA M850 PCL5 @32.57dBm m GSM 227.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 6.5. RF Output O P Power The followin ng table shows the RF output o power of EG95 module. m R Output Power P Table 39: RF Frequency y Max. Min.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n LTE-FDD B1 B (10 MHzz) -97.5 5 dBm -98.3 dBm -101.4 dBm m -96.3 dBm LTE-FDD B3 B (10 MHzz) -98.3 3 dBm -98.5 dBm -101.5 dBm m -93.3 dBm LTE-FDD B7 B (10 MHzz) -96.3 3 dBm -98.4 dBm -101.3 dBm m -94.3 dBm LTE-FDD B8 B (10 MHzz) -97.1 dBm -99.1 dBm -101.2 dBm m -93.3 dBm LTE-FDD B20 B (10 MH Hz) -97 dBm d -99 dBm -101.3 dBm m -93.3 dBm LTE-FDD B28A B (10 MHz) M -98.3 3 dBm -99 dBm -101.4 dBm m -94.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n LTE-FDD B3 B (10 MHzz) -98.3 dBm d -9 99.5 dBm -102 2.5 dBm -93.3 dBm d LTE-FDD B7 B (10 MHzz) -97.5 dBm d -9 98.4 dBm -100 0.3 dBm -94.3 dBm d LTE-FDD B8 B (10 MHzz) -98.7 dBm d -9 99.6 dBm -102 2.2 dBm -93.3 dBm d LTE-FDD B20 B (10 MH Hz) -97 dB Bm -9 97.5 dBm -102 2.2 dBm -93.3 dBm d LTE-FDD B28 B (10 MH Hz) -98.2 dBm d -9 99.5 dBm -102 2 dBm -94.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n LTE-FDD B4 B (10 MHz) -97 7.8 dBm -99.5 dBm m -102 2.2 dBm -96.3 dBm d LTE-FDD B5 B (10 MHz) -99 9.4 dBm -100 dBm m -102 2.7 dBm -94.3 dBm d LTE-FDD B12 B (10 MHz) -99 9.5 dBm -100 dBm m -102 2.5 dBm -93.3 dBm d LTE-FDD B13 B (10 MHz) -99 9.2 dBm -100 dBm m -102 2.5 dBm -93.3 dBm d LTE-FDD B25(10 B MHzz) -97 7.6 dBm -99 dBm -102 2.2 dBm -92.8 dBm d LTE-FDD B26(10 B MHzz) -99 9.1 dBm -99.9 dBm m -102 2.7 dBm -93.
andard Mod dule Series s LTE Sta EG95 Serries Hardw ware Design n LTE-FDD B66 B (10MHzz) -97 7.7dBm -98.8dBm m -101.2dBm -95.8d dBm 6.7. Elec ctrostatic c Discha arge The module e is not prote ected against electrosta atic discharg ge (ESD) in general. Co onsequently,, it is subjecct to ESD handling precau utions that tyypically apply to ESD se ensitive com mponents.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n The followin ng shows tw wo kinds of heatsink desiigns for reference and customers c ca an choose oneor o both of o them accord ding to their application structure.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n te emperature reaches r or exceeds e 115 5°C, the mod dule will disc connect from m the netwo ork, and it will recover to o network co onnected sta ate after the e maximum temperature e falls below w 115°C. Th herefore, the e thermal de esign shoulld be maxim mally optim mized to ma ake sure th he maximum m BB chip temperature e always maintains below 105°C.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 7 M Mecha anica al Dim mensiions This chapte er describess the mech hanical dime ensions of the module e.All dimenssions are measured m in n mm,and the e dimensiona al tolerancess are ±0.05m mm unless otherwise o sp pecified. 7.1. Mec chanical Dimensiions of th he Modu ule 25± ±0.15 2.330±0.2 29±0 15 29±0.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 25±0 0.15 7.45 2..75 7.155 1.10 1.95 0 5 . 0 3.90 1.10 3 3 . 0 3 9 . 2 5 8 . 4 8 5 . 1 4 4 . 1 1.00 29±0 15 29±0.15 5.10 1.70 0.20 0.85 1.10 8.500 1.90 5 9 . 5 5 2 . 4 1.10 0.85 1.000 1.70 0.7 70 1.00 1.70 0 5 . 0 0.55 1 15 1.15 1.15 2.755 0 7 . 1 0 7 . 1 62x0 0.7 40x1.0 1.70 0 4 . 0 Figure 42: EG95-E Mod dule Bottom m Dimension ns (TopView w) EG95_Serie es_Hardwa are_Design 91 9 / 103 0 4 . 0 4 40x1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 25±0 0.15 7.45 2.75 1.10 7.155 1.95 0 5 . 0 3.90 1.10 3 3 . 0 3 9 . 2 5 8 . 4 8 5 . 1 3 6 . 1 1.00 29±0.15 5.10 1.70 0.220 0.85 1. .10 8.500 1.90 5 9 . 5 5 2 . 4 1.10 0.85 1.000 1.70 0.770 1.00 1.70 0 5 . 0 1 15 1.15 0.55 1 1.15 2.755 0 7 . 1 0 7 . 1 62x0.7 40x1.0 1.70 0 4 . 0 Fig gure 43: EG G95-EX Mod dule Bottom m Dimensio ons (Top Vie ew) EG95_Serie es_Hardwa are_Design 92 9 / 103 0 4 . 0 40x1.0 0 7 .
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTES 1.. The package warpage e level of the e module con nforms to the JEITA ED D-7306 stand dard. 2.. EG95-NA, EG95-NAX X, EG95-NA AXD, EG95 5-AUX mod dule bottom dimensions are the same as EG95-EX. 7.2.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 7 7.45 1.100 7.15 1.95 1.10 3.90 0 5 . 00 5 . 0 1 N I P 5 8 . 4 1.00 29±0.15 5.10 1.70 0.20 0.85 1.10 8.50 1.90 5 9 . 5 5 2 . 4 1.10 0.85 1.000 1.70 0.70 1.000 1.70 0 5 . 0 1.15 0.55 1.15 0 5 . 0 2.75 0 7 . 1 0 7 . 1 62x0.77 40x1.0 1.70 0 4 . 0 0 4 . 0 40xx1.0 0 7 . 1 62x1.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 7.3.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Figure 47: EG95-E EX Bottom View V of the Module NOTES 1.. These are renderings of the modu ule. For auth hentic appea arance, plea ase refer to the module received from Que ectel. 2.. EG95-NA, EG95-NAX X, EG95-NA AXD, EG95 5-AUX module bottom dimensionss are the same s as EG95-EX X.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 8 Storag S ge, Manuf M facturring and a P Packa aging 8.1. Storrage The module e is provided with vacu uum-sealed packaging. MSL of the e module is rated as 3. Thestorage e requirementts are shown below. 1. Recomm mended Sto orage Condition: The temperature t should be 23±5°C an nd the relative humidityy should be b 35%–60% %. 2. The storage life (in vacuum-sea aled packag ging) is 12 months m in Re ecommended d Storage Condition. C 3.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n NOTES 1. 1) This flloor life is on nly applicable when the environmen nt conforms to IPC/JEDEC J-STD-0 033. 2. To avoid d blistering, layer separration and otther solderin ng issues, it is forbidden n to expose the moduless to the air for a long time.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n Figu ure 48: Rec commende ed Reflow Soldering S T Thermal Prrofile Table 47: Recommend R ded Therma al Profile Pa arameters Factor Recommendation Soak Zone e Max slope 1–3 °C/s Soak time (between A and B: 150°C and 200°°C) 70–120 s Reflow Zo one Max slope 2–3 °C/s Reflow tim me (D: over 220°C) 2 45–70 s Max tempe erature 238 °C to 246 2 °C Cooling do own slope -1.5 to -3 °C C/s Reflow Cy ycle Max reflow w cycle 1 8.3.
andard Mod dule Series s LTE Sta EG95 Serries Hardw ware Design n Figure 49: Tape Spec cifications e p a t r e v o C 48.5 13 100 d e e f f o n o i t c e r i D 0 44.5+0.20 -0.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 1083 Carrier tape unfoldin ng Carrrier tape packking mod dule Figure 51: Ta ape and Re eel Direction ns EG95_Serie es_Hardwa are_Design 101 / 103
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 9 A Appen ndix A Refferen nces R Doc cuments Table 48: Related SN Do ocument Na ame Rema ark [1] Qu uectel_EC2xx&EG9x_Po ower_Manag gement_ Ap pplication_Note Powe er managem ment applicattion note for EC C25 series, EC21 series s, EC20 R2.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n DFOTA Delta Firmware Upgrade Over The Air DL Downlin nk DTR Data Te erminal Read dy DTX Disconttinuous Tran nsmission EFR Enhancced Full Rate e ESD Electrosstatic Discha arge FDD Frequency Division n Duplex FR Full Rate GLONASS GLObalnayaNAvigatsionnayaS Sputnikovaya Sistema, tthe Russian Global Navigattion Satellite e System GMSK Gaussia an Minimum m Shift Keyin ng GNSS Global Navigation Satellite S Sys stem GPS Globa
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n MSL Moisturre Sensitivityy Level MT Mobile Terminated PAP Passwo ord Authentication Proto ocol PCB Printed Circuit Board PDU Protoco ol Data Unit PPP Point-to o-Point Proto ocol QAM Quadra ature Amplitu ude Modulattion QPSK Quadra ature Phase Shift Keying g RF Radio Frequency F RHCP Right Hand H Circula arly Polarized d Rx Receive e SMS Short Message M Serrvice TDD Time Division Duplexing TX Transm mitting Directti
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n VImax Absolutte Maximum m Input Volta age Value VImin Absolutte Minimum Input Voltag ge Value VOHin Minimum Output High Level Vo oltage Value e VOLmax Maximu um Output Low L Level Vo oltage Value e VOLmin Minimum Output Lo ow Level Vo oltage Value VSWR Voltage e Standing Wave W Ratio WCDMA Wideba and Code Diivision Multip ple Access EG95_Serie es_Hardwa are_Design 105 / 103
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 10 0 Apppendixx B GPRS G S Cod ding S Schem mes D of Different Coding Sc chemes Table 50: Description Scheme C CS-1 CS-2 CS--3 CS-4 Code Rate e 1//2 2/3 3/4 1 USF 3 3 3 3 Pre-coded d USF 3 6 6 12 Radio Blo ock excl.USF and BCS 181 268 312 428 BCS 40 16 16 16 Tail 4 4 4 - Coded Bitts 456 588 676 456 Punctured d Bits 0 132 220 - Data Rate Kb/s 9.05 13.4 15.6 6 21.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 11 Apppendixx C GPRS G S Multti-slot Clas sses Twenty-nine e classes of o GPRS mu ulti-slot mod des are deffined for MS S in GPRS specificatio on. Multi-slo ot classes are product dep pendent, and determine e the maximu um achievab ble data rate es in both th he uplink and d downlink dirrections.
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 15 5 5 NA A 16 6 6 NA A 17 7 7 NA A 18 8 8 NA A 19 6 2 NA A 20 6 3 NA A 21 6 4 NA A 22 6 4 NA A 23 6 6 NA A 24 8 2 NA A 25 8 3 NA A 26 8 4 NA A 27 8 4 NA A 28 8 6 NA A 29 8 8 NA A 30 5 1 6 31 5 2 6 32 5 3 6 33 5 4 6 EG95_Serie es_Hardwa are_Design 108 / 103
LTE Sta andard Mod dule Series s EG95 Serries Hardw ware Design n 12 Apppendixx D EDGE E E Mod dulation an nd Cod ding Schem S mes E Modu ulation and Coding Sch hemes Table 52: EDGE Coding Sc cheme Mo odulation Coding g Family 1 Timeslott 2 Tim meslot 4 Timeslott MCS-1 GM MSK C 8.80 kbps 17.6 60 kbps 35.20 kbpss MCS-2 GM MSK B 11.2 kbps 22.4 4 kbps 44.8 kbps MCS-3 GM MSK A 14.8 kbps 29.6 6 kbps 59.2 kbps MCS-4 GM MSK C 17.6 kbps 35.2 2 kbps 70.4 kbps MCS-5 8-P PSK B 22.
