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Summary
Infineon, as the market leader for power semiconductors, is committed to reaching the next level of system
efficiency, energy savings and power density at an affordable system cost and has, therefore, developed
GaN-based semiconductors and is preparing a technology portfolio which is perfectly suited to unlock the
full potential of GaN in the future, e.g. through fully integrated solutions.
Infineon has pursued a partnership approach to accelerate our GaN development: e.g. intense collaboration
with the Fraunhofer society. Infineon recently announced a partnership with Panasonic, transferring its
enhancement mode transistor technology which started in 2014; this will allow Infineon to offer easy-to-use
enhancement mode GaN switches in a dual sourcing approach unique in the industry.
Infineon’s first products will be discrete GaN switches in SMD packages targeting high power SMPS in the
PFC and main DC/DC stage.
The acquisition of IR has strengthened Infineon’s position in GaN even further, e.g. by expanding our patent
portfolio by more than 400 GaN patents and giving us access to high quality GaN-on-Si epitaxy, a strong
barrier to entry for many of our competitors.
IR’s product portfolio is complementary to Infineon’s with 100 V products (available). 600 V products in a
cascode configuration targeting mid-power SMPS are in qualification.
Infineon is committed to maintaining its differentiating quality standards also in new technologies such as
GaN without compromise on long term quality and reliability.
With both, the acquisition of IR and the partnership with Panasonic, Infineon is in the pole position with
GaN.