5
Q.25b: How does GaN-on-Si compare to GaN-on-SiC?
A.25b: Very good high-performance 600 V FETs can be made with GaN-on-SiC. Performance is not the issue.
Substrate cost is the major issue that will limit the value proposition of GaN-on-SiC FETs. Infineon is making its GaN
HEMTs on Si substrates which have a far lower intrinsic material cost than SiC combined with an interesting cost
roadmap as wafer diameter moves to 200mm and further.
Q.26. Is a specific support /driver required? If yes: when will this driver become available?
A.26: Driving cascode GaN transistors is straightforward, for the cascode concept a standard driver is sufficient. For
the enhancement mode devices we recommend a specific isolated driver which is proven to perfectly handle them
(1EDI EiceDRIVER™ - PN: 1EDI20N12AF), with an RC-network in the gate drive path to allow for fast turn-on and turn-
off transitions. Application notes and evaluation boards are provided to customers to explain how this works in
detail, based on regular MOSFET drivers. They will be made available to the broader market along with product
launch. In general, care must be taken to minimize loop inductance both in the gate drive as well as the power loop
to minimize voltage and current peaks, and gain the most benefit out of the fast switching devices. Moreover, the
cascode switch is compatible with standard FET gate drivers. The enhancement-mode devices can be driven with
conventional gate drivers plus an external R-C network. But a dedicated driver IC will ultimately provide higher
performance using lower power.
For either type of GaN, new controller ICs will be necessary to take full advantage of the topologies and higher
frequencies enabled by GaN.
Q.27 Where do you get your base material from?
A.27 We kindly ask for your understanding that this information is not shared at this point in time.
Q.28 Why do you launch GaN in a non-standard package?
A.28 Whether cascode or enhancement mode, specific internal connections are required which prevent the use of
standard pinouts. Moreover, thru hole packages, albeit standard for the industry, prevent the full exploitation of the
fast switching potential of GaN due to their high parasitics. Therefore, moving to SMD packages is a must for GaN,
and Infineon has developed specific packages tailored on individual application needs, optimized for low profile or
the highest thermal capability. They will be presented along with individual product launches.
Q.29 Can you comment on your GaN compared to main competitors?
A.29, Infineon does not comment on competitor activities.
Q.30 We have heard that Infineon is cooperating with Panasonic? Can you comment?
A.30 Yes, this is correct. We agreed to manufacture enhancement mode transistors in SMD packages in a compatible
way, establishing a second source for our respective customers. For that purpose Infineon has licensed Panasonic’s
enhancement mode transistor technology.
Q.30.1 The recently announced partnership with Panasonic, focused on the transfer and optimization of certain
modules of their enhancement mode GaN on Silicon HEMT technology, puts Infineon at the leading edge of GaN: we
target offering dual source capabilities at an early stage, which is unique for new technologies, a significant capacity
which is aimed at supporting a growing market and we will protect our know-how with the industry`s broadest
patent portfolio.
Q.31 What will happen to International Rectifier’s Product Brands for GaN?
A.31 No changes are planned at this point in time. GaNpowIR™ is a valuable brand and is recognized in the market.
Q.32 Some competitors have already launched First GaN Devices – what makes Infineon GaN different? What sets
Infineon apart?
A.32 Infineon has the largest GaN expert team with the deepest understanding of the technology, a very strong GaN
patent portfolio, scalable manufacturing setup, availability of SMD packages for low and high power applications and
deep application understanding.