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ManualsBrandsQ&A GaN 01_00 ManualsOtherMar 09, 2015

Q&A GaN

February 2015

Q.1 How does GaN-on-Silicon fit into Infineon’s strategy?

A.1 Infineon has been the global market leader in power semiconductors for 11years (source: IHS 2014). With our

solutions, we continuously minimize the loss of power in our customers’ systems and enable ever more compact

system designs. We have, therefore, already worked intensively on GaN-based power semiconductors for a number

of years. Meanwhile, we do not focus solely on performance but also on the high standards we have set ourselves in

terms of quality, reliability and delivery for the customer. Moreover, Infineon continues to strive for technology

leadership, complementing our broad technology portfolio of CoolMOS™, OptiMOS™ and SiC active devices. We will

start by developing a portfolio of discrete switches but, in line with the Infineon strategy ‘From product to system`,

we will soon also offer integrated solutions; leveraging the fact that GaN is a viable alternative technology.

Infineon recognizes that Gallium Nitride (GaN) switches will enable the next level of system efficiency, energy saving

and power density and, therefore, decided to invest a significant amount of its R&D effort to pursue this challenge.

Infineon Technologies strives to maintain its technology leadership in power semiconductors. Infineon will produce

GaN-on-Silicon transistors, the only way to make GaN cost competitive with Si in the medium term. GaN-on-Silicon

(Si) will offer the opportunity for highest efficiency and most compact designs in focus applications such as SMPS in

server/telecom, mobile power and consumer applications, complementing Infineon’s high-end product portfolio.

Q.2 How does the acquisition of International Rectifier change Infineon’s GaN strategy?

A.2 While Infineon’s GaN-on-Silicon development has made good progress over the past years, the acquisition of

International Rectifier now substantially expands our competence in this field and positions Infineon clearly as the

technology leader in GaN. International Rectifier has developed a broad patent portfolio, great GaN-on-Silicon

epitaxy capabilities, working technologies in different voltage classes, as well as first qualified products. International

Rectifier developed normall y OFF GaN HEMTs (High Electron Mobility Transistors) by cascoding depletion mode

HEMTs with low-voltage FETs while Infineon developed enhancement mode HEMTs technology. Infineon has now

both technologies available and is planning to bring them to the market by exploiting the individual advantages

versus Silicon by application/system. At the same time, Infineon is committed to developing the necessary Surface

Mount Device (SMD) packages and ICs to fully exploit the superior performance of GaN.

Q.3.What does this acquisition mean for IR and the IR GaN strategy?

A.3 IR’s GaN activities have been fully integrated into the Infineon GaN program and we are now working on the

execution of a joint and powerful GaN roadmap.

Q.4 What relevance do the new GaN-on-Silicon products have in supporting Infineon’s contribution to the three

key questions of modern society - energy efficiency, mobility, security?

A.4 Infineon´s GaN-on-Silicon product portfolio will support energy efficiency through further minimizing losses

compared to Silicon. In addition, we expect that GaN will play a role in the automotive market - not only due to

higher efficiency but also because GaN enables smaller form factors. However, we expect GaN will take off in the

automotive market once its reliability under adverse conditions has been fully proven. In a nutshell: GaN-on-Silicon

devices and solutions will enable the next major step in reducing energy consumption and size/weight of power

converters.

Q.5 How does GaN fit into the existing Si and Silicon carbide (SiC) portfolio?

A.5 600 V GaN-on-Silicon products will allow our customers to reach highest efficiency levels or particularly small

form factors in areas where this is required. GaN opens up new possibilities since it can operate at higher

frequencies compared to Silicon and allows new topologies in electric circuits. However, we will continue to offer

high performance Si products which we expect to remain the larger part of our Power business for years to come, in

particular in the mid-performance range. We see SiC more in the 600 V and above range, whereas GaN will be

covering the range below and up to 600 V.

Summary of content (6 pages)

PAGE 1
Q&A GaN February 2015 Q.1 How does GaN-on-Silicon fit into Infineon’s strategy? A.1 Infineon has been the global market leader in power semiconductors for 11years (source: IHS 2014). With our solutions, we continuously minimize the loss of power in our customers’ systems and enable ever more compact system designs. We have, therefore, already worked intensively on GaN-based power semiconductors for a number of years.
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Q.6 In what ways are both companies’ technologies complementary? A.6 The cascode (depletion mode) concept has the advantage of being suitable for standard gate drivers. Furthermore, the cascode solution offers a very low Vf body diode for reverse operation; turn-off speed is very fast and unconstrained by any feedback capacitance. The cascode can also be used in low to medium switching frequencies in resonant applications such as ZVS PFC up to a few MHz.
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Q.10 In which applications will GaN be used and offer the biggest benefit? A10: GaN will make an impact in many segments such as mobile power, telecom, servers, Class D audio systems and motor drives bringing benefits such as higher efficiency, smaller form factor, and lower harmonic distortion. Adoption rates will differ from application to application, starting with those where highest performance is required or system cost or Total Cost of Ownership reduction is achieved.
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Q.16 Are samples also available for other customers? A.16 We are working with a select group of customers based on the demands placed on applications engineering teams. As the product portfolio develops, including the controller and driver ICs, additional demo boards and support collateral will also become available. All documentation will be released in combination with dedicated product launches. Q.17 When will it go into high volume production? A.
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Q.25b: How does GaN-on-Si compare to GaN-on-SiC? A.25b: Very good high-performance 600 V FETs can be made with GaN-on-SiC. Performance is not the issue. Substrate cost is the major issue that will limit the value proposition of GaN-on-SiC FETs. Infineon is making its GaN HEMTs on Si substrates which have a far lower intrinsic material cost than SiC combined with an interesting cost roadmap as wafer diameter moves to 200mm and further. Q.26.
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Summary  Infineon, as the market leader for power semiconductors, is committed to reaching the next level of system efficiency, energy savings and power density at an affordable system cost and has, therefore, developed GaN-based semiconductors and is preparing a technology portfolio which is perfectly suited to unlock the full potential of GaN in the future, e.g. through fully integrated solutions.  Infineon has pursued a partnership approach to accelerate our GaN development: e.g.