Specifications

Zylogic ZE5 Configurable System-on-Chip Platform
www.Zylogic.com.cn 94
Electrical and Timing Characteristics
A
A
b
b
s
s
o
o
l
l
u
u
t
t
e
e
M
M
a
a
x
x
i
i
m
m
u
u
m
m
R
R
a
a
t
t
i
i
n
n
g
g
s
s
Symbol Parameter Min Max Units
V
CC
Supply voltage relative to GND -0.5 4.0 V
V
IN
Input voltage relative to GND [1] -0.5 6.5 V
V
TS
Voltage applied to three-state output [1] -0.5 5.5 V
T
STG
Storage temperature (ambient) -60 +150 ° C
T
SOL
Maximum soldering temperature (10 s at 1/16 in. = 1.5
mm)
+260 ° C
T
J
Junction temperature, plastic packages +125 ° C
R
R
e
e
c
c
o
o
m
m
m
m
e
e
n
n
d
d
e
e
d
d
O
O
p
p
e
e
r
r
a
a
t
t
i
i
n
n
g
g
C
C
o
o
n
n
d
d
i
i
t
t
i
i
o
o
n
n
s
s
/
/
D
D
C
C
C
C
h
h
a
a
r
r
a
a
c
c
t
t
e
e
r
r
i
i
s
s
t
t
i
i
c
c
s
s
Symbol Parameter Min Max Units
V
CC
Supply voltage relative to GND 3.0 3.6 V
Operating junction temperature, commercial [3] 0 +85 ° C
T
J
Operating junction temperature, industrial [3] -40 +100 ° C
V
CCR
Longest supply voltage rise time from 1V to 3V [4] 200 ms
V
IL
Input Low voltage -0.5 30% V
CC
V
V
IH
Input High voltage 50% V
CC
5.5 V
V
S
Schmitt Hysteresis, hysteresis mode 5% VCC 20% VCC V
V
ESD
Electro-static discharge protection, human body model 2 000 V
T
IN
Input signal transition time 250 ns
Output Low voltage, I
OL
= -12 mA, V
CC
min (TTL) [5] 0.4 V
V
OL
Output Low voltage, I
OL
= -1.5 mA, V
CC
min (LVCMOS) 10% VCC V
Output High voltage, I
OH
= 6 mA, V
CC
min (TTL) [5] 2.4 V
V
OH
Output High voltage, I
OH
= 0.5 mA, V
CC
min (LVCMOS) 90% VCC V
V
DR
Data retention supply voltage (below which initialization
data may be lost)
2.5 V
Output Low current, output in highest drive strength
mode (TTL), V
OL
max, V
CC
min
-12.0 mA
Output Low current, output in lowest current drive mode
(TTL), V
OL
max, V
CC
min
-4.0 mA
I
OL
Output Low current (LVCMOS), V
OL
max, V
CC
min -1.5 mA
Output High current, output in highest drive strength
mode (TTL), V
OH
min, V
CC
min
+6.0 mA
Output High current, output in lowest drive strength
mode (TTL), V
OH
min, V
CC
min
+2.0 mA
I
OH
Output High current (LVCMOS), V
OH
min, V
CC
min +0.5 mA
I
IL
Input leakage current -10 +10 µA
C
IO
Pin capacitance [7] 10 pF
L
IO
Pin inductance [7] 20 nH
Note 1:
Maximum DC overshoot above VCC or undershoot below GND must be limited to either 0.5 V or 10 mA,
whichever is easier to achieve. During transitions, device pins may undershoot to -2.0 V or overshoot to
+5.0 V, provided this condition lasts less than 20 ns and with less than 100 mA forcing current.
Note 2:
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent device damage.
The values listed are stress ratings only. Functional operation of the device at these or any conditions
exceeding those listed under Recommended Operating Conditions is not implied. Exposure to Absolute
Maximum Ratings conditions for extended periods may affect device reliability.
Note 3:
Typical ambient operating conditions are between 0 to +70° C for commercial applications and
-40 to +85° C, depending on the application's power consumption, package style, and airflow.
Note 4:
Ramp rate can be extended by asserting RST- until V
CC
reaches the minimum specified value.
Note 5:
Output in highest drive strength mode.
Note 6:
Continuous static loads must fall within the I
OH
, I
OL
limits in this section.