Technology comparison: GaN vs Silicon*
Param eter
E-
mode
GaN
Equivalent
Super
junction
FET
Comments
V
dss
600 V 600 V
R
DSon
typ 25°C 52 mΩ 52 mΩ
E
oss
7 uJ 8 uJ
Near parity
for
hard switching
performance
T
k
,R
DS(on)
(150
°
C/25
°
C)
1.8 2.37
R
DS(on)
Tempco
Q
g
(10 V V
gs
, 400 V V
ds
)
6 nC 68 nC
GaN >10x lower than
Superjunction
FET
Q
rr
(100 A/µs, 25°C)
1 nC
(
Q
oss
: 44 nC
)
6,000 nC
GaN >100X lower than
SJ (including
Q
oss
)
C
o(tr)
(400 V) 110 pF 1,050 pF
GaN
~10x lower
R
θ J-C (°C/W) 1.0 0.77
Consistent with package
2a
* GaN values are for prototype devices
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14.04.2016 Copyright © Infineon Technologies AG 2016. All rights reserved.