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Concluding comments
The historical record shows new switch technologies are adopted and grow new
market segments where they push the performance window
KEY GaN device FOM‘s are demonstrated with 10-100x improvement over
silicon (C
oss
TR, Q
rr
)
It is clear this can be leveraged for higher density power conversion
solutions using ZVS and LLC topology
Early applications identified but more will follow as cost of GaN device
lowers and investment continues in new topology and application
infrastructure
LV and HV MOSFET‘s continue with fast pace of improvement in market
segments that are still growing: Silicon is not at the end of the road!
Silicon Market size not shrinking any time soon
Ultimately the size of new market segments which adopt GaN will
depend strongly on system cost
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14.04.2016 Copyright © Infineon Technologies AG 2016. All rights reserved.