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Technology comparison summary

› Superjunction C

oss

and C

rss

behave very nonlinearly with voltage and

frequency

› Comparable R

DS(on)

GaN devices have much lower capacitance than

their SJ FET counterparts when measured at low voltage; this

difference greatly diminishes at higher voltages; there is not a large

difference in E

oss

at 400 V

› C

o(tr)

of GaN device is ~10x lower than SJ FET and this

difference is sustainable; this benefit can be leveraged in ZVS

applications where it can result in lower power losses

› This benefit grows with frequency (as a fixed deadtime grows in

percentage of total switching cycle time)

› Q

>100x lower for GaN devices: this can be leveraged in choice

of topology and application