Sample Silicon Qualification Test Plan
3 Copyright © Infineon Technologies AG 2013. All rights reserved.
Accelerated Environment Stress Tests
REQUIRED RELIABILITY TESTS
Parameter
Part Type
Test
Conditions
Duration
measurements @
Quantity
Part no “X”
TC
-55°C/150°C
1000 cy
0/168/500/1000
3 x 77
H
3
TRB
85°C/85%RH/100V
1000 hrs
0/168/500/1000
3 x 77
HTRB
150°C/960V
1000 hrs
0/168/500/1000
3 x 77
HTGB
150°C/20V
1000 hrs
0/168/500/1000
3 x 77
IOL
delta Tj = 100°C
5,000 cy
0/2500/5000
3 x 77
AC
121°C/15psig
96 hrs
0/96
3 x 77
/480V
On what basis can one assume that the test conditions typically
used in Si Device qualification, if applied to qualify GaN Devices,
will assure a given useful life in application?