17
MTTF and FIT Rate for HV Gate Dielectric Material
5 6 7 8 9 10 11 12 13 14 15 16 17 18
10
-1
10
1
10
3
10
5
10
7
10
9
10
11
10
13
10
15
MTTF at RT
MTTF at 85C
MTTF at 110C
MTTF at 150C
MTTF (hrs)
V
GSS
(V)
MTTF & FIT Rate vs Stress voltage
10
-6
10
-4
10
-2
10
0
10
2
10
4
10
6
10
8
10
10
FIT rate at RT
FIT rate at 85C
FIT rate at 110 C
FIT rate at 150 C
FIT rate (FIT)
Preliminary
predictions:
MTTF > 10
8
hrs;
FIT~1
@ application
conditions
17
Degradation models required for component structures of the GaN HEMT:
• Gate dielectric
• AlGaN/GaN material
• Passivation materials
• Metallization (electromigration)