15
Reliability of 600V GaN Devices up to 5,000
hours of HTRB
• 600V GaN devices are inherently reliable
• Source-drain resistance Rdson of 600 V rated cascode switch for a
population of representative cascoded GaN-on-Si based HEMT devices
with Wg = 120 mm, under a drain bias of 480 V and 0 gate bias for
5000 hrs at 150 C.