Summary
GaN HEMTs offer performance improvements for
power electronic applications
– Benefits are strongly topology-dependent
– Just dropping GaN into existing circuit may show little benefit
Half-bridge topology is good match for GaN
– Half-bridge requires good dynamic reverse conduction
– Both cascode and e-mode GaN devices benefit half-bridge
Higher efficiency at same frequency
– By use of better topologies i.e. totem-pole PFC
Higher frequency at high efficiency
– Lower charge of GaN helps HF performance
– E.g. LLC example and ZVS full-bridge example
APEC 2015 Seminar S17
76