GaN HEMT Short-Circuit Capability
Initial devices are high-gain – limited SCSOA
– Typically ~ 1 µs @ 300V
Likely tradeoff between gain and SCSOA similar to IGBTs
APEC 2015 Seminar S17
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Ref: Xing Huang; Dong Young Lee; Bondarenko, V.; Baker, A.; Sheridan, D.C.; Huang, A.Q.; Baliga, B.J., "Experimental
study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)," Proc. ISPSD pp.273,276, 15-19 June 2014