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ManualsBrandsPresentation GaN APEC 2015 GaN Applications 01_00 Manualselectrical equipment & suppliesMar 18, 2015

GaN enables shorter deadtime vs SJ @ 1MHz

 Shorter deadtime lowers rms current

APEC 2015 Seminar S17

61

I

2

Primary

I

2

Secondary

Gate Drive

GaN

3.84A

2

48.0A

2

0.24W

Superjunction

4.93A

2

64.6A

2

1.88W

Difference

+28.3%

+34.6%

+685%

SJ FET

GaN

V

ds

V

gs

i

prim

i

centertap

80ns dead time

200ns dead time