GaN Device Summary
Both cascode and enhancement mode –
compared to superjunction:
Provides MUCH lower Qrr (zero for e-mode)
– Enables use of efficient half-bridge topologies
Provide smaller, more linear Qoss
– Reduces deadtime in resonant and ZVS circuits
Provide lower gate charge Qg
– Lower gate drive power and faster switching speed
Eoss not much difference
Does not have avalanche behavior
– Does have overvoltage capability
APEC 2015 Seminar S17
45